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2020
  1. eeHigh-Temperature Operation of Gallium Oxide Memristors up to 600 Kff, K. Sato, Y. Hayashi, N. Masaoka, T. Tohei, and A. Sakai, Sci. Rep. 13, 1261 (2023).
  2. eeGate-tunable Plasticity in Artificial Synaptic Devices Based on Four-Terminal Amorphous Gallium Oxide Memristorsff, T. Ikeuchi, Y. Hayashi, T. Tohei, and A. Sakai, Appl. Phys. Express, 16, 015509 (2023).
  3. eeInterface Engineering of Amorphous Gallium Oxide Crossbar Array Memristors for Neuromorphic Computingff, N. Masaoka, Y. Hayashi, T. Tohei, and A. Sakai, Jpn. J. Appl. Phys., 62, SC1035 (2023).
  4. eeComprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substratesff, T. Hamachi, T. Tohei, Y. Hayashi, M. Imanishi, S. Usami, Y. Mori, and A. Sakai, Sci. Rep.,13, 2436 (2023).
  5. eeMicro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templatesff,Y. Nakanishi, Y. Hayashi, T. Hamachi, T. Tohei, Y. Nakajima, S. Xiao, K. Shojiki, H. Miyake, and A. Sakai, J. Electron. Mater.,52, 10348 (2023).
  6. eeElectrical Conduction Mechanism of Schottky Contacts Fabricated on a Single Threading Dislocation in an HVPE-grown Si-doped GaN Substrateff, T. Sato, T. Hamachi, T. Tohei, Y. Hayashi, M. Imanishi, S. Usami, Y. Mori, and A. Sakai, Mater. Sci. Semicond. Process., 167, 107778-1-7 (2023).

2020
  1. eeMolecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaningff, Z. Zhang, Y. Hayashi, T. Tohei, A. Sakai, V. Protasenko, J. Singhal, H. Miyake, H. G. Xing, D. Jena, and Y. Cho, Science Advances 8, eabo6408 (2022).
  2. eeVersatile Functionality of Four-Terminal TiO2-x Memristive Devices as Artificial Synapses for Neuromorphic Computingff, R. Miyake, Z. Nagata, K. Adachi, Y. Hayashi, T. Tohei, and A. Sakai, ACS Applied Electronic Materials 2022, 4, 5, 2326-2336 (2022).

2020
  1. eePropagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substratesff, T. Hamachi, T. Tohei, Y. Hayashi, M. Imanishi, S. Usami, N. Ikarashi, Y. Mori, and A. Sakai, Journal of Applied Physics 129, 225701 (2021).
  2. eeAnalysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffractionff, H. Shiomi, A. Ueda, T. Tohei, Y. Imai, T. Hamachi, K. Sumitani, S. Kimura, Y. Ando, T. Hashizume and A. Sakai, Applied Physics Express 14, 095502 (2021).
  3. eeThermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a- plane sapphire under high-temperature annealingff, Y. Hayashi, K. Uesugi, K. Shojiki, T. Tohei, A. Sakai, and H. Miyake, AIP Advances 11, 095012 (2021).

2020
  1. eeLocal piezoelectric property in Na-flux GaN bulk single crystalsff, A. Ueda, T. Hamachi, A. Okazaki, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, and A. Sakai, Journal of Applied Physics 128, 125110 (2020).
  2. eeFabrication of GaOx based crossbar array memristive devices and their resistive switching propertiesff, Mamoru Joko, Yusuke Hayashi, Tetsuya Tohei, and Akira Sakai, Japanese Journal of Applied Physics 59, SMMC03 (2020).

2019
  1. eeLocal current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux methodff, T. Hamachi, T. Tohei, M. Imanishi, Y. Mori, and A. Sakai, Japanese Journal of Applied Physics 58, 050918 (2019).
  2. hQuantitative analysis of lattice plane microstructure in the depth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffractionh, K. Shida, N. Yamamoto, T. Tohei M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai, Japanese Journal of Applied Physics 58, SCCB16 (2019).
  3. "Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method", T. Hamachi, T. Tohei, M. Imanishi, Y. Mori, and A. Sakai, Japanese Journal of Applied Physics 58, SCCB23 (2019).
  4. "Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals", Shotaro Takeuchi, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Nobuyuki Ikarashi & Akira Sakai, Scientific Reports 9, 2601 (2019).
  5. "Gate Tuning of Synaptic FunctionsBased on Oxygen Vacancy Distribution Control in Four-Terminal TiO2|x Memristive Devices", Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Nobuyuki Ikarashi & Akira Sakai, Scientific Reports 9, 10013 (2019).

2018
  1. gAnalysis of Ti valence states in resistive switching regions of a rutile TiO2| x four-terminal memristive deviceh, Kengo Yamaguchi et al 2018 Jpn. J. Appl. Phys. 57 06KB02.
  2. gLeakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopyg, T. Hamachi, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, and A. Sakai Journal of Applied Physics 123, 161417 (2018).
  3. gResistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substratesg,Hideki Matsui, Takafumi Ishibe, Tsukasa Terada, Shunya Sakane, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, Shigeru Kimura, and Yoshiaki Nakamura. Appl. Phys. Lett. 112, 031601 (2018)
  4. gMicrostructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffractiong,K. Shida, S. Takeuchi, T. Tohei, H. Miyake, K. Hiramatsu, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai Journal of Applied Physics 123, 161563 (2018)
  5. hDepth-resolved analysis of lattice distortions in high-Ge-content SiGe/composition-ally graded SiGe films using nanobeam X-ray diffractionh, K. Shida, S. Takeuchi, T. Tohei, Y. Imai, S. Kimura, A. Schulze, M. Caymax, and A. Sakai, Semiconductor Science and Technology 33, 124005 (2018).

2017
  1. gTomographic Mapping Analysis in the Depth Direction of High-Ge- Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X]ray Diffractionh,Kazuki Shida,õ Shotaro Takeuchi,*,õ Yasuhiko Imai,ö Shigeru Kimura,ö Andreas Schulze,˜ Matty Caymax,˜ and Akira Sakai*,õ. ACS Appl. Mater. Interfaces 2017, 9, 13726|13732
  2. gControl of dislocation morphology and lattice distortion in Na-flux GaN crystalsh, S. Takeuchi, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai. Journal of Applied Physics 122, 105303 (2017)
  3. gQuantification of local strain distributions in nanoscale strained SiGe FinFET structuresh, Shogo Mochizuki, Conal E. Murray, Anita Madan, Teresa Pinto, Yun-Yu Wang, Juntao Li, Weihao Weng, Hemanth Jagannathan, Yasuhiko Imai, Shigeru Kimura, Shotaro Takeuchi, and Akira Sakai. Journal of Applied Physics 122, 135705 (2017)
  4. gStudy on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffractionh, Dinh Thanh Khan1*, Shotaro Takeuchi2, Yoshiaki Nakamura2, Kunihiko Nakamura2, Takuji Arauchi2, Hideto Miyake3, Kazumasa Hiramatsu3, Yasuhiko Imai4, Shigeru Kimura4, and Akira Sakai2. Japanese Journal of Applied Physics 56, 025502 (2017)
  5. gEpitaxial multilayers of ƒÀ-FeSi2 nanodots/Si for Si-based nanostructured electronic materialsh, S. Sakane, M. Isogawa, K. Watanabe, J. Kikkawa, S. Takeuchi, A. Sakai, and Y. Nakamura, J. Vac. Sci. Technol. A 35, 041402 (2017).
  6. gTomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers using Nanobeam X-ray Diffractiong, K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Schulze, M. Caymax, and A. Sakai, Appl. Mater. Interfaces, 9, 13726 (2017).
  7. gStudy on the influence of different terench-patterned template on the crystalline microstructure of AlN epitaxial films by X-ray microdiffractiong, D. T. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, Jpn. J. Appl. Phys. 56, 025502 (2017).

2016
  1. gIndependent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materialsh, S. Yamasaka, K. Watanabe, S. Sakane, S. Takeuchi, A. Sakai, K. Sawano and Y. Nakamura, Sci. Rep. 6, 22838 (2016).
  2. gFabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Techniqueh, T. Ueda, S. Sakane, T. Ishibe, K. Watanabe, S. Takeuchi, A. Sakai, and Y. Nakamura, J. Electronic Materials 45, 1914 (2016).
  3. gPositional dependence of defect distribution in semipolar (20-21) hydride vapor phase epitaxy-GaN films grown on (22-43) patterned sapphire substratesh, T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai, Jpn, J. Appl. Phys. 55, 05FA07 (2016).
  4. gEpitaxial iron oxide nanocrystals with memory function grown on Si substratesh, T. Ishibe, H. Matsui, K. Watanabe, S. Takeuchi, A. Sakai, and Y. Nakamura, Appl. Phys. Express 9, 055508 (2016).
  5. gMicrostructural analysis for an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping techniqueh, S. Kamada, S. Takeuchi, D. T. Khan, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, Appl. Phys. Express, S. Kamada, S. Takeuchi, D. T. Khan, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, Appl. Phys. Express 9, 111001 (2016).

2015
  1. gDislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN " , S. Takeuchi, H. Asazu, M. Imanishi, Y. Nakamura, M. Imade, Y. Mori, and A. Sakai, J. Appl. Phys. 118, 245306 (2015).
  2. gPhonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materialsh, S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi, and A. Sakai, Sci. Rep. 5, 14490 (2015).
  3. " Formation and optical properties of Ge films grown on Si(1 1 1) substrates using nanocontact epitaxy",Kazuki Tanaka, Yoshiaki Nakamura, Shuto Yamasaka, Jun Kikkawa, Takenobu Sakai, Akira Sakai, Applied Surface Science 325, 170 (2015).
  4. " Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/ƒ¿-Al2O3 template", D. T. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, J. Cryst. Growth 411, 38 (2015).
  5. "Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates", S. Takeuchi, T. Uchiyama, T. Arauchi, Y. Hashimoto, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, and A. Sakai, Phys. Status Solidi B 252, 1142 (2015).
  6. "Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy", T. Arauchi, S. Takeuchi, Y. Hashimoto, Y. Nakamura, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai, Phys. Status Solidi B 252, 1149 (2015).
  7. "Myoglobin-based non-precious metal carbon catalysts for an oxgen reduction reaction", A. Onoda, Y. Tanaka, T. Ono, S. Takeuchi, A. Sakai, and T. Hayashi, J. Porphyrins Phthalocyanines 19, 510 (2015).
  8. "Fabrication of Si Thermoelectric Nanomaterials Containing Ultrasmall Epitaxial Ge Nanodots with an Ultrahigh Density", S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi, Y. Yamamoto, S. Arai, T. Tanji, N. Tanaka, and A. Sakai, J. Electronic Materials 44, 2015 (2015).
  9. "Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material", Y. Nakamura, M. Isogawa, T. Ueda, S. Yamasaka, H. Matsui, J. Kikkawa, S. Ikeuchi, T. Oyake, T. Hori, J. Shiomi, and A. Sakai, Nano Energy 12, 845 (2015)

2014
  1. "In situ doped epitaxial growth of highly dopant-activated n(+)-Ge layers for reduction of parasitic resistance in Ge-nMISFETs" Y. Moriyama, Y. Kamimuta, Y. Kamata, K. Ikeda, A. Sakai, and T. Tezuka, Appl. Phys. Express 7, 106501 (2014).
  2. "Self-assembly of Ge clusters on highly oriented pyrolytic graphite surfaces", Masayuki Shimonaka, Yoshiaki Nakamura, Jun Kikkawa, Akira Sakai, Surface Science 628, 82 (2014).
  3. "Control of epitaxial growth of Fe-based nanocrystals on Si substrates using well-controlled nanometer-sized interface", Yoshiaki Nakamura, Ryota Sugimoto, Takafumi Ishibe, Hideki Matsui, Jun Kikkawa, and Akira Sakai, J. Appl. Phys. 115, 044301 (2014).
  4. "Improvement effect of electrical properties in post-annealed waferbonded Ge(001)-OI substrate", Shuto Yamasaka, Yoshiaki Nakamura, Osamu Yoshitake, Jun Kikkawa, Koji Izunome, and Akira Sakai Phys. Status Solidi A 211, 601 (2014) .
  5. "Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template", Takuji Arauchi, Shotaro Takeuchi, Kunihiko Nakamura, Dinh Thanh Khan, Yoshiaki Nakamura, Hideto Miyake, Kazumasa Hiramatsu, and Akira Sakai Phys. Status Solidi A 211, 731 (2014).
  6. "Dislocation behavior of surface-oxygen-concentration controlled Si wafers", Hirotada Asazu, Shotaro Takeuchi, Hiroya Sannai, Haruo Sudob, Koji Araki, Yoshiaki Nakamura, Koji Izunome, Akira Sakai Thin Solid Films 557, 106 (2014).
  7. "Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers", Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, Appl. Phys. Express 7, 086501 (2014).


2013
  1. "Fabrcation of bonded GeOI substrates with thin Al2O3/SiO2 buried oxidelayers", Y. Moriyama, K. Ikeda, Y. Kamimuta, M. Oda, T. Irisawa, Y. Nakamura, A. Sakai, T. Tezuka, Solid-State Electronics 83, 42 (2013).
  2. "Structural analysis of vicinal Si(110) surfaces with various off-angles", M. Yamashita, Y. Nakamura., A. Yamamoto, J. Kikkawa, K. Izunome, A. Sakai, Appl. Surf. Sci. 267, 136 (2013).
  3. "Formation mechanism of peculiar structures on vicinal Si(110) surfaces", M. Yamashita, Y. Nakamura., R. Sugimoto, J. Kikkawa, K. Izunome, A. Sakai, Appl. Surf. Sci. 267, 53(2013).
  4. "Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/ƒ¿-Al2O3 template", D.T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai, Journal of Crystal Growth 381, 37(2013).
  5. "Characterization of Ge Films on Si(001) Substrates Grown by Nanocontact Epitaxy", Wataru Ikeda, Yoshiaki Nakamura*, Shogo Okamoto, Shotaro Takeuchi, Jun Kikkawa, Masakazu Ichikawa, Akira Sakai, Jpn. J. Appl. Phys. 52, 095503 (2013).
  6. "Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas", Hironobu Hamanaka, Yoshiaki Nakamura, Takafumi Ishibe, Jun Kikkawa, and Akira Sakai J. Appl. Phys. 114, 114309 (2013).
2012
  1. "Electrical characterization of wafer-bondedGe(111)-on-insulator substrates using four-point-probe pseudo-MOSFET", K. Minami, Y. Nakamura, S. Yamasaka, O. Yoshitake, J. Kikkawa, K. Izunome, and A. Sakai, Thin Solid Films 520, 3232 (2012).
  2. "Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substrates", S. Harada, J. Kikkawa, Y. Nakamura, G. Wang, M. Caymax , and A. Sakai, Thin Solid Films 520, 3245 (2012).
2011
  1. "Annealing Effects on Ge/SiO2 interface Structure in wafer-bonded germanium-on-insulator substrates", O. Yoshitake, J. Kikkawa, Y. Nakamura, A. Sakai, E. Toyoda, H. Isogai and K. Izunome, Jpn. J. Appl. Phys. 50, 04DA13 (2011).
  2. "Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET", Y. Iwasaki, Y. Nakamura, J. Kikkawa, A. Sakai, M. Sato, E. Toyoda, H. Isogai, and K. Izunome, Jpn. J. Appl. Phys. 50, 04DA14 (2011).
  3. "X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates", K. Ebihara, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata, Solid-State Electron., 60, 26 (2011).
  4. "Self-organization of two-dimensional SiGe nanodot arrays using selective etching of pure-edge dislocation network", Y. Nakamura, M. Takahashi, T. Fujiwara, J. Kikkawa, A. Sakai, O. Nakatsuka, and S. Zaima, J. Appl. Phys. 109, 044301 (2011).
  5. "Structural change during the formation of directly bonded silicon substrates", T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, Key Eng. Mater. 470, 158 (2011).
  6. "Microscopic structure of directly bonded silicon substrates", T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura, Key Eng. Mater. 470, 164 (2011).
  7. "Structural analysis of Si-based nanodot arrays self-organized by selective etching of SiGe/Si films", M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima1, and A. Sakai, Jpn. J. Appl. Phys. 50, 08LB11 (2011).
  8. "Effect of low-energy Ga ion implantation on selective growth of gallium nitride layer on silicon nitride surfaces using metal-organic chemical vapor deposition", K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa, Jpn. J. Appl. Phys. 50, 06GC02 (2011).
2010
  1. "X-ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates", K. Ebihara, S. Harada, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata, ECS Trans. 33, 887 (2010).
  2. "Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing", T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, and O. Sakata, Thin Solid Films 518, S147 (2010).
  3. "Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursorh, H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Appl. Phys. Lett. 95, 012105 (2010).
  4. "Low temperature growth of Ge1-xSnx buffer layers for tensile?strained Ge layersh, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Thin Solid Films 518 (6), pp. S2-S5 (2010).
  5. gUse of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technologyh, N.D. Nguyen, E. Rosseel, S. Takeuchi, J.-L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J.C. Lin, W. Vandervorst, M. Caymax, Thin Solid Films 518 (6), pp. S48-S52 (2010).
  6. gStructural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealingh, T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata, Thin Solid Films 518 (6), pp. S147-S150 (2010).
  7. gMobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substratesh, O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, S. Zaima Jpn. J. Appl. Phys., in press.
2009
  1. gMechanical properties and chemical reactions at the directly bonded Si-Si interfaceh, E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaima, Jpn. J. Appl. Phys. 48, pp. 011202-1-5 (2009).
  2. gCharacterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substratesh, E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima, Jpn. J. Appl. Phys. 48, pp. 021208-1-4 (2009).
  3. gThermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodesh, H. Kondo, K. Furumai, M. Sakashita, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 04C012-1-5 (2009).
  4. gControl of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layersh, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 04C130-1-4 (2009).
  5. gMicrostructures in directly bonded Si substratesh, Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori, Solid-State Electronics, 53 (8), pp. 837-840 (2009).
  6. gNovel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substratesh, T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima, Solid-State Electronics 53 (11), pp. 1198-1201 (2009).
  7. gControl of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-x Snx Buffer Layerh, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Trans. MRS-J, 34 (2), 301-304 (2009).
  8. gFormation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structuresh, T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima, Trans. MRS-J, 34 (2), 305-308 (2009).

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  2. "A nanoXRD Based Analysis on HVPE GaN Structure Combined with Machine Learning" Z. WU, Y. Nakanishi, Y. Hayashi, T. Tohei, Y. Imai, K. Sumitani, S. Kimura, and A. Sakai
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  • International Workshop on Advanced and In-Situ Microscopies of Functional Nanomaterials and Devices (IAMNano) 2023, June 28th ~ 30th, 2023
  1. "Analysis of Shear Plane Formation Mechanism in Single Crystal TiO2-x Memristor by Using In-Situ TEM Observation" R. Takada, T. Tohei, Y. Hayashi, and A. Sakai
  • 2023 International Conference on Solid State Devices and Materials, Nagoya congress center, September 5th ~ 8th, 2023
  1. "Finite element analysis of oxygen vacancy behavior in four-terminal TiO2-x memristive devices" Y. Koizumi, R. Miyake, Y. Hayashi, T. Tohei, and A. Sakai
  2. gLocal strain distribution analysis in strained SiGe spintronics devicesh T. Onabe, Z. Wu, T. Tohei, Y. Hayashi, K. Sumitani, Y. Imai, S. Kimura, T. Naito, K. Hamaya, and A. Sakai
  • ‘æ84‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïAŒF–{éƒz[ƒ‹‚Ù‚©3‰ïêA2023”N9ŒŽ19“ú`9ŒŽ23“ú
  1. "AlGaNŒnUV-B”g’·ƒŒ[ƒUƒ_ƒCƒI[ƒh‚Ì[‚³•ª‰ðƒiƒmƒr[ƒ€Xü‰ñÜ" ’JŒûãÄ‘¾A—јЉîA“¡•½“N–çA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘º Ž AŠâ’J‘fŒ°AŽO‘îGlAŽðˆä ˜N
  2. "4’[Žq•½–ÊŒ^TiO2-xƒƒ‚ƒŠƒXƒ^‚É‚¨‚¯‚éŽ_‘f‹óE‹““®‚Ì—LŒÀ—v‘f–@‰ðÍ" ¬ò—D‹IAŽO‘î—º‘¾˜YA—јЉîA“¡•½“N–çAŽðˆä˜N
  3. "˜c‚ÝSiGeƒXƒsƒ“ƒgƒƒjƒNƒXƒfƒoƒCƒX‚É‚¨‚¯‚é‹ÇŠ˜c‚Ý•ª•z‰ðÍ" ”ö“ç —F‹BA • U“ŒA “¡•½ “N–çA —Ñ ˜Ð‰îA ‹÷’J ˜aŽkA¡ˆä N•FA –Ø‘º Ž A “à“¡ ‹M‘åA •l‰® G•½A Žðˆä ˜N
  • 2023 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology-Kanazawa Chamber of Commerce and Industry, Ishikawa, Japan October 23rd-25th
  1. "Implementation of Pavlovian conditioning with TiO2-x miniaturized four-terminal planar memristors" Ryohei Yamamoto, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
  • 14th International Conference on Nitride Semiconductors, Hilton FUkuoka Sea Hawk, Novenber 12th - 17th, 2023
  1. "Depth-resolved nanoXRD of AlGaN-based UV-B wavelength laser diodes" S. Taniguchi, Y. Hayashi, T. Tohei, K. Sumitani, Y. Imai, S. Kimura, M. Iwaya, H. Miyake, and A. Sakai
  • 2023 International Conference on Materials and Systems for Sustainability Nagoya University December 1st~3rd
  1. "Nanosecond-Response Operando Analysis of Inverse Piezoelectric-Induced Lattice Deformation in AlGaN/GaN HEMT" M. Yamaguchi, A. Shimada, Y. Imai, T. Tohei, Y. Hayashi, T. Hashizume, K. Sumitani, S. Kimura, and A. Sakai

2022
  • 2022 International Conference on Solid State Devices and Materials,Online oral presentation, September 26th ~ 29th, 2022
  1. "Amorphous GaOx Crossbar Array Memristors for Artificial Synaptic Devices" N. Masaoka, Y. Hayashi, T. Tohei, and A. Sakai
  • ‘æ83‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïŒû“ªƒZƒbƒVƒ‡ƒ“AƒnƒCƒuƒŠƒbƒhŠJÃA2022”N9ŒŽ20“ú`9ŒŽ23“ú
  1. "‘æˆêŒ´—ŒvŽZ‚É‚æ‚郋ƒ`ƒ‹Œ^TiO2’†‚Ì™’’f–Ê\‘¢‹y‚ÑŽ_‘f‹óE‹““®‚̉ðÍ" “ñ‹{‰ë‹PC—јЉîC“¡•½“N–çCŽðˆä˜N
  • 9th Internasional Symposium on Control of Semiconductor Interfaces, Online oral presentation, Septembr 5th ~ 8th, 2022
  1. "Conduction Mechanism of Fabricated on Single Threading Dislocations in an HVPE-GaN Substrate" T. Sato, T. Hamachi, T. Tohei, Y. Hayashi, M. Imanishi, S. Usami, Y. Mori, and A. Sakai
  2. gFirst-Principles Analysis of Oxygen Vacancy Behavior in Rutile TiO2 under External Electric Fieldsh M. Ninomiya, Y. Hayashi, A. Sakai, and T. Tohei
  • 19th Internasional Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Online oral presentation, August 29th ~ September 1st, 2022
  1. "Microstructural Analysis of Thick AlN Films Grown 0n NPSS Using Cross-Sectional and Plan-View Transmission Electron Microscopy" Y. Nakanishi, T. Hamachi, Y. Nakajima, Y. Hayashi, T. Tohei, X. Shiyu, K. Shojiki, H. Miyake, and A. Sakai
  • ‘æ69‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïŒû“ªƒZƒbƒVƒ‡ƒ“AƒIƒ“ƒ‰ƒCƒ“ŠJÃA2022”N3ŒŽ22“ú`3ŒŽ26“ú
  1. "Ž_‘f‹óE•ª•z§ŒäŒ^ƒƒ‚ƒŠƒXƒ^‚ð—p‚¢‚½‘½‹@”\lHƒVƒiƒvƒX" Žðˆä˜NC“¡•½“N–çC—јЉî
  2. "GaOxƒƒ‚ƒŠƒXƒ^‚Ì’ïRƒXƒCƒbƒ`ƒ“ƒO“Á«•]‰¿" ²“¡Œ’lC—јЉîC“¡•½“N–çCŽðˆä˜N
  3. "•½–ÊŒ^ TiO2-xƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚é’ïR•Ï‰»—̈æ‚Ì‚»‚ÌêTEMŠÏŽ@" ’JŒû“Þ•äC—јЉîC“¡•½“N–çCŽðˆä˜N
  4. "ƒXƒpƒbƒ^ƒAƒj[ƒ‹AlNãGaN/AlN 2ŽŸŒ³³EƒKƒX\‘¢‚Ì“d‹C“Á«•]‰¿‚Æ”÷×\‘¢‰ðÍ" ¼‘ºŠC‰¹, ’†¼—I‘¾, —јЉî, “¡•½“N–ç, Chaudhuri Reet, Cho Yongjin, Xing Huili, Jena Debdeep, 㙌ª“ñ˜Y, ŽO‘îGlCŽðˆä˜N
  5. "’f–ÊE•½–ÊTEM‚É‚æ‚éNPSSãAlNŒú–Œ‚Ì”÷×\‘¢‰ðÍ" ’†¼—I‘¾Aà_’nˆÐ–¾A’†“‡‹`Œ«A—јЉîA“¡•½“N–çAÑ ¢‹ÊA³’¼‰Ô“ÞŽqAŽO‘îGlAŽðˆä˜N
  6. "[‚³•ª‰ðƒiƒmƒr[ƒ€Xü‰ñÜ–@‚É‚æ‚éƒR[ƒ“Œ^NPSSãAlNŒú–Œ‚Ì‚‹óŠÔ•ª‰ð”\3ŽŸŒ³ƒgƒ‚ƒOƒ‰ƒtƒBƒbƒN‰ðÍ" ’†¼—I‘¾A—јЉîA“¡•½“N–çA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AÑ¢‹ÊAŽO‘îGlAŽðˆä˜N
  7. "‘½‘w‹É«”½“]AlN‚ÌŒXŽÎ–ÊKOHƒGƒbƒ`ƒ“ƒO‚É‚æ‚é‹É«”»’è" —јЉîA’†¼—I‘¾A“¡•½“N–çA㙌ªŽŸ˜YA³’¼‰Ô“ÞŽqAŽO‘îGlAŽðˆä˜N
  8. "ƒXƒpƒbƒ^ƒAƒj[ƒ‹–@‚Å컂µ‚½AlN‹É«”½“]\‘¢‚É‚¨‚¯‚éŽ_‘fƒvƒ‰ƒYƒ}ÆŽËŒø‰Ê" —јЉîALi JiayingA’†¼—I‘¾A“¡•½“N–çA㙌ªŽŸ˜YA³’¼‰Ô“ÞŽqAŽO‘îGlAŒÜ\—’MsAŽðˆä˜N
  9. "Structural Analysis on OVPE GaN by Nanobeam X-ray Diffraction" Zhendong WU, Y. Nakanishi, Y. Hayashi, T. Tohei, J. Takino, Y. Imai, K. Sumitani, S. Kimura, and A. Sakai
  10. "ƒAƒ‚ƒ‹ƒtƒ@ƒXGaOx‚ð—p‚¢‚½ƒNƒƒXƒo[ƒAƒŒƒCƒƒ‚ƒŠƒXƒ^‚Ì’ïR•Ï‰»“Á«" ³‰ª’¼Ž÷C—јЉîC“¡•½“N–çCŽðˆä˜N
  11. "GaNŽ©—§Šî”Â’†‚̂点‚ñ¬•ª‚ðŠÜ‚ÞŠÑ’Ê“]ˆÊ•”‚ÉŒ`¬‚µ‚½ƒVƒ‡ƒbƒgƒL[ÚG‚É‚¨‚¯‚郊[ƒN“Á«•]‰¿" à_’nˆÐ–¾C“¡•½“N–çC—јЉîC‰F²”ü–ΉÀC¡¼³KCX—E‰îCŽðˆä˜N
  12. "“ÁˆÙ“I‚É‘å‚«‚ȃŠ[ƒN“d—¬‚𶂶‚½GaNŠî”Â’†b=1c‚点‚ñ“]ˆÊ‚É‚¨‚¯‚éƒVƒ‡ƒbƒgƒL[ÚG‚ÌI-V-T“Á«‰ðÍ" à_’nˆÐ–¾C“¡•½“N–çC—јЉîC‰F²”ü–ΉÀC¡¼³KCX—E‰îCŽðˆä˜N

2021
  • International Workshop on Dielectric Thin Films for Future Electron Devices -Science & Technology, Online presentation, November 14th ~ November 16th , 2021
  1. "Temperture-Dependent Resistive Switching Properties of GaOx Memristors up to 600 K" K. Sato, Y. Hayashi, T. Tohei, and A. Sakai
  • ICMaSS 2021 International Conference on Materials and Stystems for Sustinability, Online presentation, November 4th ~ November 6th , 2021
  1. "Operando Measurement of Local Piezoelectric Lattice Strain in AlGaN/GaN HEMT Devices by Synchrotron Radiation Nanobeam X-ray Diffraction" A.Shinada, H. Shiomi, Y. Imai, T. Tohei, Y. Hayashi, S. Kaneki, T. Hashizume, K. Sumitani, S. Kimura and A. Sakai
  • MEMRISYS 2021 4th international Conference on Memristive Materials, Devices & Systems, Online presentation, November 1st ~ November 4th , 2021
  1. "Habituation and Sensitization Properties Mimicked in Four-terminal TiO2-x Memristive Devices" K. Adachi, Y. Hayashi, T. Tohei and A. Sakai
  2. "Pavlovian Conditioning Implemented in Four-terminal TiO2-x Memristive Devices" R. Miyake, K. Adachi, Y. Hayashi, T. Tohei, and A. Sakai
  • ‘æ82‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïŒû“ªƒZƒbƒVƒ‡ƒ“AƒIƒ“ƒ‰ƒCƒ“ŠJÃA2021”N9ŒŽ10“ú`9ŒŽ13“ú
  1. "‚‰·”Mˆ—‚µ‚½ƒXƒpƒbƒ^AlN–Œ‚̃Nƒ‰ƒbƒN”­¶ðŒ"—јЉîA㙌ªŽŸ˜YA³’¼‰Ô“ÞŽqAŽO‘îGlA“¡•½“N–çAŽðˆä˜N
  2. "HVPE-GaNŽ©—§Šî”‚̊ђʓ]ˆÊ‚É‚¨‚¯‚éƒVƒ‡ƒbƒgƒL[ÚG‚Ì“d‹C“Á«‚Æ”÷×\‘¢‚̈ê‘Έê•]‰¿" à_’nˆÐ–¾C“¡•½“N–çC—јЉîC¡¼³KC‰F²”ü–ΉÀ, X—E‰îCŽðˆä˜N
  3. "Analysis of Crystal structure Associated with Dislocation Gathering in Na-flux GaN by Nanobeam X-ray Diffraction"Zhendong WU, Y. Nakanishi, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
  4. "HVPE-GaNŽ©—§Šî”Â’†’P“ÆŠÑ’Ê“]ˆÊã‚É컂µ‚½ƒVƒ‡ƒbƒgƒL[ÚG‚É‚¨‚¯‚é“d‹C“Á«‚̉·“xˆË‘¶«" ²“¡r˜a, à_’nˆÐ–¾C“¡•½“N–çC—јЉîC¡¼³KC‰F²”ü–ΉÀ, X—E‰îCŽðˆä˜N
  5. "ƒR[ƒ“Œ^NPSSãAlNƒeƒ“ƒvƒŒ[ƒg‚ɬ’·‚³‚¹‚½AlNŒú–Œ‚Ì”÷×\‘¢‰ðÍ"’†¼—I‘¾AŽR–{–]Aà_’nˆÐ–¾A—јЉîA“¡•½“N–çA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AÑ¢‹ÊAŽO‘îGlAŽðˆä˜N
  6. "‘æˆêŒ´—ŒvŽZ‚ÉŠî‚­ŠO•”“dꉺ‚É‚¨‚¯‚郋ƒ`ƒ‹Œ^TiO2’†‚ÌŽ_‘f‹óE‹““®‚̉ðÍ"“ñ‹{‰ë‹PA“¡•½“N–çA—јЉîAŽðˆä˜N
  • International Conference on Solid State Devices and MaterialsAOnline presentationASeptember 6th ~ September 9th , 2021
  1. "Heterosynaptic Property Demonstrated with Planer Four Terminal Amorphous GaOx Memristive Devices" T. Ikeuchi, Y. Hayashi, T. Tohei, and A. Sakai
  2. "High-Resolution Tomographic Analysis on AlN films Grown on NPSSs Using Nanobeam X-Ray Diffraction" Y. Hayashi, N. Yamamoto, Y. Nakanishi, T. Hamachi, T. Tohei, K. Sumitani, Y. Imai, S. Kimura, K. Shojiki, H. Miyake and A. Sakai
  • ‘æ68‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïŒû“ªƒZƒbƒVƒ‡ƒ“AƒIƒ“ƒ‰ƒCƒ“ŠJÃA2021”N3ŒŽ16“ú`3ŒŽ19“ú
  1. "ƒiƒmƒr[ƒ€Xü‰ñÜ‚É‚æ‚éHVPE-GaNƒoƒ‹ƒNŒ‹»‚É‚¨‚¯‚é’P“ÆŠÑ’Ê“]ˆÊŽü•Ó‚Ì‹ÇŠ˜c‰ðÍ" à_’nˆÐ–¾C“¡•½“N–çC—јЉîC‰F²”ü–ΉÀC¡¼³KCX—E‰îC‹÷’J ˜aŽk, ¡ˆä N•F, –Ø‘º Ž , Žðˆä˜N
  2. "Analysis of Stress and Impurity Evolution Related to Growth Sector in Na-flux GaN by Nanobeam X-ray Diffraction" Zhendong WU, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
  3. "ƒiƒmƒr[ƒ€Xü‰ñÜ‚É‚æ‚éOVPE¬’·GaNŒ‹»‚Ì”÷×\‘¢‰ðÍ"ŒI’J~A“¡•½“N–çAà_’nˆÐ–¾A—јЉîA‘ê–ì~ˆêA‹÷’q—ºA‰F²”ü–ΉÀA¡¼³KAX—E‰îA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜N
  4. "AlGaN/GaN HEMTƒfƒoƒCƒX‚É‚¨‚¯‚é‹ÇŠˆ³“dŠiŽq•ÏŒ`‚Ì•úŽËŒõƒiƒmƒr[ƒ€Xü‰ñ܃Iƒyƒ‰ƒ“ƒhŒv‘ª"‰–Œ©t“ÞA“ˆ“c ÍGA“¡•½ “N–çA—Ñ ˜Ð‰îA‹à–Ø §‘¾A‹´‹l •ÛA¡ˆä N•FA‹÷’J ˜aŽkA–Ø‘º Ž AŽðˆä ˜N
  5. "ƒiƒmƒr[ƒ€Xü‰ñÜ–@‚É‚æ‚éNPSSãAlNŒú–Œ‚Ì[‚³•ª‰ðŒ‹»«ƒgƒ‚ƒOƒ‰ƒtƒBƒbƒN•]‰¿"ŽR–{–]A—јЉîAà_’nˆÐ–¾A’†¼—I‘¾A“¡•½“N–çA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ A³’¼‰Ô“ÞŽqAŽO‘îGlAŽðˆä˜N
  6. "4’[Žq•½–ÊŒ^TiO2-xƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚éŽ_‘f‹óE•ª•z2ŽŸŒ³§Œä‚ÉŠî‚­LTPELTD“Á«‚ÌŽÀ‘•" ˆÀ’BŒ’‘¾C“¡•½“N–çC—јЉîC Žðˆä˜N
  7. "4’[Žq•½–ÊŒ^ƒAƒ‚ƒ‹ƒtƒ@ƒXGaOxƒƒ‚ƒŠƒXƒ^‘fŽq‚ÌŠJ”­‚Æ’ïR•Ï‰»“Á«•]‰¿"’r“à‘¾ŽuA—јЉîA“¡•½“N–çAŽðˆä˜N
  • ‰ž—p•¨—Šw‰ïŠÖ¼Žx•”2020”N‘æ1‰ñ+‘æ2‰ñ‡“¯u‰‰‰ïAƒIƒ“ƒ‰ƒCƒ“ŠJÃA2021”N1ŒŽ27“ú
  1. "ƒ‹ƒ`ƒ‹Œ^TiO2•½–ÊŒ^ƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚é’ïR•Ï‰»—̈æ‚Ì‚»‚ÌêTEMŠÏŽ@" ’JŒû “Þ•äA“¡•½ “N–çAãb ŽçŽ¡A—Ñ ˜Ð‰îAŽðˆä ˜N

2020
  • ‘æ81‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïAƒIƒ“ƒ‰ƒCƒ“ŠJÃA2020”N9ŒŽ8“ú`9ŒŽ11“ú
  1. "HVPE-GaNƒoƒ‹ƒNŒ‹»‚É‚¨‚¯‚éŠÑ’Ê“]ˆÊ‚Ì3ŽŸŒ³“IŒ`‘Ԃƃo[ƒK[ƒXƒxƒNƒgƒ‹‚ÌŠÖŒW" à_’nˆÐ–¾C“¡•½“N–çC—јЉîC¡¼³KCX—E‰îCŒÜ\—’MsCŽðˆä˜N
  2. "HVPE-GaNƒoƒ‹ƒNŒ‹»‚É‚¨‚¯‚éa‹y‚Ña+cƒ^ƒCƒvŠÑ’Ê“]ˆÊ‚Ì3ŽŸŒ³“I“`”d‹““®‚̉ðÍ" à_’nˆÐ–¾C“¡•½“N–çC—јЉîC¡¼³KCX—E‰îCŽðˆä˜N
  3. "Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction: Local Lattice Constant Variation Depending on the Growth Mode"Zhendong WU, K. Shida, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
  4. "OVPE–@‚Ŭ’·‚µ‚½GaNƒoƒ‹ƒN’PŒ‹»‚Ì”÷×\‘¢‰ðÍ"ŒI’J~A“¡•½“N–çAà_’nˆÐ–¾A—јЉîA‘ê–ì~ˆêA‹÷’q—ºA¡¼³KAX—E‰îA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜N
  5. "ƒAƒ‚ƒ‹ƒtƒ@ƒXŽ_‰»ƒKƒŠƒEƒ€‚ð—p‚¢‚½ƒƒ‚ƒŠƒXƒ^‚Ì’ïR•Ï‰»“Á«‚¨‚æ‚уVƒiƒvƒX“Á«"ãb ŽçŽ¡A’r“à ‘¾ŽuA—Ñ ˜Ð‰îA“¡•½ “N–çAŽðˆä ˜N
  6. "N-PSSãƒXƒpƒbƒ^‘ÍσAƒj[ƒ‹AlNƒeƒ“ƒvƒŒ[ƒg‚ɬ’·‚³‚¹‚½AlNŒú–Œ‚Ì”÷×\‘¢‰ðÍ" ŽR–{–]Aà_’nˆÐ–¾A—јЉîA“¡•½“N–çAŽO‘îGlAŽðˆä˜N
  7. "4’[Žq•½–ÊŒ^TiO2-xƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚éƒhƒi[ƒCƒIƒ“•ª•z2ŽŸŒ³§Œä‚ÉŠî‚­STPELTP“Á«‚ÌŽÀ‘•"ˆÀ’BŒ’‘¾CŽO‘î—º‘¾˜YC“¡•½“N–çC—јЉîCŽðˆä˜N
  8. "AlGaN/GaN HEMTƒfƒoƒCƒX‚É‚¨‚¯‚é‹ÇŠˆ³“dŠiŽq•ÏŒ`‚Ì•úŽËŒõƒiƒmƒr[ƒ€Xü‰ñ܃Iƒyƒ‰ƒ“ƒhŒv‘ª"“ˆ“c ÍGA‰–Œ© t“ÞA“¡•½ “N–çA—Ñ ˜Ð‰îA‹à–Ø §‘¾A‹´‹l •ÛA¡ˆä N•FA‹÷’J ˜aŽkA–Ø‘º Ž AŽðˆä ˜N
  • The 8th Asian Conference on Crystal Growth and Crystal TechnologyAOnline presentationAMarch 1st , 2021~ March 3rd , 2021
  1. "Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction: Local Lattice Constant Variation Depending on the Growth Sector" Zhendong WU, K. Shida, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai

2019
  • ‘æ67‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïAã’q‘åŠwŽl’JƒLƒƒƒ“ƒpƒXA2020”N3ŒŽ12“ú`3ŒŽ15“ú
  1. "‘æˆêŒ´—ŒvŽZ‚É‚æ‚éŠO•”“dꉺ‚É‚¨‚¯‚郋ƒ`ƒ‹Œ^TiO2 ’†‚ÌŽ_‘f‹óE‹““®‰ðÍ" ˆä㌒C“¡•½“N–çC—јЉîCŽðˆä˜N
  2. "4’[Žq•½–ÊŒ^TiO2-xƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚éƒpƒuƒƒtŒ^ðŒ•t‚¯‚ÌŽÀ‘•" ŽO‘î —º‘¾˜YC—Ñ ˜Ð‰î, “¡•½ “N–çCŽðˆä ˜N
  3. "ƒiƒmƒr[ƒ€Xü‰ñÜ–@‚É‚æ‚é‚Ge‘g¬SiGe^‘g¬ŒXŽÎSiGe^SiÏ‘w\‘¢‚Ì[‚³•ª‰ðŒ‹»«ƒgƒ‚ƒOƒ‰ƒtƒBƒbƒN•]‰¿"Žu“c ˜aŒÈC“¡•½ “N–çC—Ñ ˜Ð‰îC‹÷’J ˜aŽkC¡ˆä N•FC–Ø‘º Ž CŽðˆä ˜N
  4. "Na-flux-GaNã‚Ɉ笂µ‚½HVPE-GaNƒoƒ‹ƒN’PŒ‹»‚É‚¨‚¯‚éŠÑ’Ê“]ˆÊ‚ÌŒ`‘ԂƘR‚ê“d—¬“Á«‚Ì•]‰¿"à_’n ˆÐ–¾C“¡•½ “N–çC—Ñ ˜Ð‰îC¡¼ ³KCX —E‰îCŽðˆä ˜N
  • ‰ž—p•¨—Šw‰ïŠÖ¼Žx•”2019”N‘æ3‰ñŽx•”u‰‰‰ïAŽY‹Æ‹Zp‘‡Œ¤‹†Š@ŠÖ¼ƒZƒ“ƒ^[A2020”N2ŒŽ21“ú
  1. "‚Ge“Y‰ÁNaƒtƒ‰ƒbƒNƒXGaNŒ‹»‚Ì“ÁˆÙ\‘¢‰ðÍ" ŒÃ‰êˆê˜NC—јЉîC“¡•½“N–çC²“¡—²CŽOD’¼ÆC‘ºã–¾”ÉCŽMŽR³“ñC¡ˆäN•FC‹÷’J˜aŽkC–Ø‘ºŽ CŽðˆä˜N
  2. "Oxide-Vapor-Phase-Epitaxy–@‚Ŭ’·‚µ‚½GaNƒoƒ‹ƒN’PŒ‹»‚Ì”÷×\‘¢‰ðÍ" ŒI’J~C“¡•½ “N–çCŽu“c˜aŒÈCà_’nˆÐ–¾C—Ñ ˜Ð‰îC‘ê–ì~ˆêC‹÷’q—ºC¡¼³KCX—E‰îC‹÷’J˜aŽkC¡ˆäN•FC–Ø‘ºŽ CŽðˆä˜N
  3. "Nano-patterned sapphire substrateã‚̃Xƒpƒbƒ^‘ÍσAƒj[ƒ‹AlNƒeƒ“ƒvƒŒ[ƒg‚ð—p‚¢‚½AlNŒú–Œ‚ÌŒ‡Š×\‘¢‰ðÍ" ŽR–{–]Cà_’nˆÐ–¾C—јЉîC“¡•½“N–çCŽO‘îGlCŽðˆä˜N
  • ‘æ2‰ñŒ‹»HŠw×ISYSE ‡“¯Œ¤‹†‰ïA“Œ‹ž‘åŠw–{‹½ƒLƒƒƒ“ƒpƒXA 2019”N11ŒŽ20“ú
  1. "HVPE-GaNƒoƒ‹ƒN’PŒ‹»’†ŠÑ’Ê“]ˆÊ‚É‚¨‚¯‚é˜R‚ê“d—¬“Á«‚É‹y‚Ú‚·“]ˆÊ\‘¢‚̉e‹¿" à_’nˆÐ–¾ C“¡Œ³¹l C“¡•½“N–ç C—јЉî C¡¼³K CX—E‰î CŽðˆä˜N
  • 2019 International Workshop on Dielectric Thin Films for future electron devices -science and technology- (IWDTF 2019), 2019”N11ŒŽ18“ú`11ŒŽ20“ú
  1. "Fabrication of GaOx Based Crossbar Array Memristive Devices and Their Resistive Switching Properties" Mamoru Joko, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
  • ‰ž—p•¨—Šw‰ïŠÖ¼Žx•”2019”N‘æ2‰ñŽx•”u‰‰‰ïA‘åã‘åŠw–L’†ƒLƒƒƒ“ƒpƒXA2019”N11ŒŽ8“ú
  1. "Microstructure analysis of FFC-GaN crystal" Zhendong WU, Kazuki Shida, Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura and Akira Sakai
  2. "GaOx‚ð—p‚¢‚½ƒNƒƒXƒo[ƒAƒŒƒCƒƒ‚ƒŠƒXƒ^‚ÌŠJ”­‚Æ’ïR•Ï‰»“Á«" ãb ŽçŽ¡A—Ñ ˜Ð‰îA“¡•½ “N–çAŽðˆä ˜N
  3. "HVPE-GaNƒoƒ‹ƒN’PŒ‹»‚É‚¨‚¯‚éŠÑ’Ê“]ˆÊ‚Ì\‘¢‚ƘR‚ê“d—¬‚ÌŠÖ˜A«" à_’nˆÐ–¾C“¡Œ³¹lC“¡•½“N–çC—јЉîC¡¼³KCX—E‰îCŽðˆä˜N
  • ‘æ3‰ñ“dŽqÞ—¿ŽáŽèŒð—¬‰ïiISYSEjŒ¤‹†‰ïA‚‚­‚΃Zƒ~ƒi[ƒnƒEƒXA2019”N11ŒŽ2“ú`11ŒŽ3“ú
  1. "HVPE-GaNƒoƒ‹ƒN’PŒ‹»‚É‚¨‚¯‚éŠÑ’Ê“]ˆÊ‚Ì\‘¢‚ƘR‚ê“d—¬‚ÌŠÖ˜A«" à_’nˆÐ–¾C“¡Œ³¹lC“¡•½“N–çC—јЉîC¡¼³KCX—E‰îCŽðˆä˜N
  • International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019)A2019”N11ŒŽ1“ú`11ŒŽ3“ú
  1. "Atomic and electronic structure analysis of resistive switching regions in rutile TiO2-x based four-terminal memristive devices" Tsuyoshi Isaka, Tetsuya Tohei, Takuma Shimizu, Shotaro Takeuchi, Nobuyuki Ikarasi and Akira Sakai
  • ‘æ80‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïA–kŠC“¹‘åŠw‘åŽD–yƒLƒƒƒ“ƒpƒXA2019”N9ŒŽ18“ú`9ŒŽ21“ú
  1. "4’[ŽqTiO2-x”––Œƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚æ‚é ƒVƒiƒvƒX“Á«‚ÌŽÀ‘•" ŽO‘î—º‘¾˜YA—јЉîA“¡•½“N–çAŽðˆä˜N
  2. "‘g¬ŒXŽÎ‘w‚ð—L‚·‚éSiŠî”Âã‚Ge‘g¬SiGe–Œ‚Ì[‚³•ª‰ðƒiƒmƒr[ƒ€Xü‰ñÜ•]‰¿" Žu“c˜aŒÈA “¡•½“N–çA—јЉîA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜N
  3. "GaOx‚ð—p‚¢‚½ƒNƒƒXƒo[ƒAƒŒƒCƒƒ‚ƒŠƒXƒ^‚ÌŠJ”­‚Æ’ïR•Ï‰»“Á«" ãb ŽçŽ¡A—Ñ ˜Ð‰îA“¡•½ “N–çAŽðˆä ˜N
  4. "ƒnƒCƒhƒ‰ƒCƒh‹C‘Š¬’·GaNƒoƒ‹ƒN’PŒ‹»‚Ì ’P“ÆŠÑ’Ê“]ˆÊ‚É‚¨‚¯‚é˜R‚ê“d—¬•]‰¿" à_’nˆÐ–¾C“¡Œ³¹lC“¡•½“N–çC—јЉîC¡¼³KCX—E‰îCŽðˆä˜N
  • 2019 International Conference on Solid State Devices and Materials (SSDM2019)A2019”N9ŒŽ2“ú`9ŒŽ5“ú
  1. "Oxygen vacancy distribution control for resistive switching of epitaxial TiO2-x thin films in four-terminal memristive devices" Ryotaro Miyake, Zenya Nagata, Tetsuya Tohei, Akira Sakai
  • 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)A2019”N7ŒŽ7“ú`7ŒŽ12“ú
  1. "Multilateral Investigation of Electrical and Microstructural Properties of Threading Dislocations in Na-flux-grown GaN Crystals" Takeaki Hamachi, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Akira Sakai
  • ‘æ11‰ñƒiƒm\‘¢EƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·u‰‰‰ïAL“‡‘åŠw“ŒL“‡ƒLƒƒƒ“ƒpƒXA2019”N6ŒŽ13“ú`6ŒŽ15“ú
  1. "Naƒtƒ‰ƒbƒNƒXGaNƒoƒ‹ƒN’PŒ‹»‚É‚¨‚¯‚éŠÑ’Ê“]ˆÊ‚ÌŒ‹»\‘¢‚ƘR‚ê“d—¬‚ÌŠÖ˜A«" à_’nˆÐ–¾A“¡•½“N–çA¡¼³KAX—E‰îAŽðˆä˜N
  • ‘æ66‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïA“Œ‹žH‹Æ‘åŠw‘剪ŽRƒLƒƒƒ“ƒpƒXA2019”N3ŒŽ9“ú`3ŒŽ12“ú
  1. "ƒhƒi[–§“x•ª•z§ŒäŒ^ƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚é’ïR•Ï‰»‹@\‚Ì—LŒÀ—v‘f–@ƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“" ‰i“c‘P–çA“¡•½“N–çAŽðˆä˜N
  2. "TiO2-xƒGƒsƒ^ƒLƒVƒƒƒ‹”––Œ‚ð—p‚¢‚½4’[Žqƒƒ‚ƒŠƒXƒ^‘fŽq‚Ì’ïR•Ï‰»“Á«" ŽO‘î—º‘¾˜YA“¡•½“N–çAŽðˆä˜N
  3. "ˆ³“dŒø‰Ê‚É‚æ‚é‹ÇŠŠiŽq•ÏŒ`‚̃iƒmƒr[ƒ€ X ü‰ñÜ•]‰¿" A“c ‰l , “¡•½ “N–ç , ‹´‹l •Û ,¡ˆä N•F , ‹÷’J ˜aŽk ,–Ø‘º Ž  , Žðˆä ˜N
  4. "OVPE –@‚É‚æ‚éƒzƒ‚ƒGƒsƒ^ƒLƒVƒƒƒ‹ GaN Œú–Œ‚ÌŒ‡Š×\‘¢•]‰¿" ^“çŠCŠóC“¡•½“N–ç,‘ê–ì~ˆê, ‹÷’q—º, ¡¼³K, X—E‰î, Žðˆä˜N
  5. "Na ƒtƒ‰ƒbƒNƒX GaN ƒoƒ‹ƒN’PŒ‹»‚Ì’P“Æ“]ˆÊ‚É‚¨‚¯‚é˜R‚ê“d—¬“Á«‚ƃo[ƒK[ƒXƒxƒNƒgƒ‹‚̉ðÍ" à_’n ˆÐ–¾, “¡•½ “N–ç, ¡¼ ³K, X —E‰î, Žðˆä ˜N
2018
  • International Workshop on Nitride Semiconductors, 2018”N11ŒŽ11“ú`11ŒŽ16“ú
  1. "Local electrical and structural analysis for threading dislocation in the modified Na-flux GaN bulk single crysta" T. Hamachi, T. Tohei, M. Imanishi, Y. Mori, A. Sakai
  2. "Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction" Kazuki Shida, N. Yamamoto, Tetsuya Tohei, Masayuki Imanishi,Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai
  • ‘æ79‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïA–¼ŒÃ‰®‘Û‰ï‹cêA2018”N9ŒŽ18“ú`9ŒŽ21“ú
  1. "ƒiƒmƒr[ƒ€Xü‰ñÜ–@‚É‚æ‚é‰ü—ÇŒ^Naƒtƒ‰ƒbƒNƒXGaNƒoƒ‹ƒN’PŒ‹»‚Ì[‚³•ûŒüŒ‹»\‘¢‰ðÍ" KŽu“c˜aŒÈA ŽR–{–]A“¡•½“N–çA¡¼³KAX—E‰îA‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜N
  2. "‰ü—ÇŒ^Naƒtƒ‰ƒbƒNƒXGaN’PŒ‹»“à’P“Æ“]ˆÊ‚̘R‚ê“d—¬“Á«‰ðÍ" à_’nˆÐ–¾A“¡•½“N–çA¡¼³KAX—E‰îAŽðˆä˜N
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018), 2018”N9ŒŽ9“ú`9ŒŽ13“ú
  1. "Gate-Tuning of Synaptic Functions Based on the Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices" Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Akira Sakai
  • ‘æ10‰ñ•úŽËŒõŠw‰ïŽáŽèŒ¤‹†‰ïA“Œ‹ž‘åŠw–{‹½ƒLƒƒƒ“ƒpƒXA2018”N9ŒŽ3“ú,9ŒŽ4“ú
  1. "ƒiƒmƒr[ƒ€Xü‰ñÜ–@‚ð—p‚¢‚½”¼“±‘ÌŒ‹»‚Ì[‚³•ª‰ðŒ‹»\‘¢‰ðÍ" Žu“c˜aŒÈA“¡•½“N–çAAndreas SchulzeAMatty CaymaxAŽO‘îGlA•½¼˜a­A‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜N
  • International Symposium on Growth of III-Nitrides, Warsaw, PolandA2018”N8ŒŽ5“ú`8ŒŽ10“ú
  1. "Leakage current analysis for individual dislocations in the modified Na-flux GaN bulk single crystal" T. Hamachi, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, and A. Sakai
  2. "Nanobeam X-ray Diffraction Analysis of Local Lattice Distortions in the Growth Direction of a Modified Na-Flux GaN Bulk Crystal" K. Shida, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
  • Joint ISTDM / ICSI 2018 Conference, Potsdam, GermanyA2018”N5ŒŽ27“ú`5ŒŽ31“ú
  1. "Tomographic Mapping Analysis of Lattice Distortions in the Depth Direction of High-Ge-Content SiGe Films with Compositionally Graded Buffer Layers Using Nanobeam X-ray Diffraction" K. Shida, S. Takeuchi, T. Tohei, Y. Imai, S. Kimura, A. Schulze, M. Caymax, and A. Sakai
  • ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïA‘ˆî“c‘åŠw¼‘ˆî“cƒLƒƒƒ“ƒpƒXA2018”N3ŒŽ17“ú`3ŒŽ20“ú
  1. "ƒiƒmƒr[ƒ€Xü‰ñÜ–@‚ð—p‚¢‚½‘g¬ŒXŽÎ‘w‚ð—L‚·‚é‚Ge‘g¬SiGe–Œ‚ÌŒ‹»[‚³•ûŒüŠiŽq–Ê”÷×\‘¢ƒgƒ‚ƒOƒ‰ƒtƒBƒbƒN‰ðÍ" ›Žu“c˜aŒÈA ’|“೑¾˜YA “¡•½“N–çA¡ˆäN•FA–Ø‘ºŽ AAndreas SchulzeAMatty CaymaxAŽðˆä˜N
  2. "Ž_‘f‹óE•ª•z§ŒäŒ^4’[Žqƒƒ‚ƒŠƒXƒ^‘fŽq‚Ì’ïR•Ï‰»“Á«¸–§§Œä" ›´…‘ñ–A‰i“c‘P–çA’|“೑¾˜YA“¡•½“N–çAŽðˆä˜N
  3. "Ž_‘f‹óE•ª•z§ŒäŒ^4 ’[Žqƒƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚é’ïR•Ï‰»‹@\‚Ì—LŒÀ—v‘f–@ƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“" ›‰i“c‘P–çA´…‘ñ–A’|“೑¾˜YA“¡•½“N–çAŽðˆä˜N
  4. "‰ü—ÇŒ^Naƒtƒ‰ƒbƒNƒXGaN’PŒ‹»“à‚Ì’P“Æ“]ˆÊ‚É‚¨‚¯‚é˜R‚ê“d—¬“Á«•]‰¿" Zà_’nˆÐ–¾A’|“೑¾˜YA“¡•½“N–çA¡¼³KA¡oŠ®
  • 21st SANKEN International Symposium The 16th SANKEN Nanotechonology InternationalA2018”N1ŒŽ16“ú`1ŒŽ17“ú
  1. "Leakage current analysis in GaN-on-GaN p-n diode by conductive atomic force microscopy" S. Mizutani, T. Hamachi, S. Takeuchi, T. Tohei, T. Kachi, S. Sarayama, A. Sakai

2017
  • Institute of Materials and Systems for Sustainability SymposiumA2017”N11ŒŽ22“ú`11ŒŽ25“ú
  1. "Valence State Analysis of Ti in Resistive Switching Region of Rutile TiO2-x Single Crystals Memristor" Kengo Yamaguchi1, Shotaro Takeuchi1, Takuma Shimizu1, Tetsuya Tohei1, Nobuyuki Ikarashi2, Akira Sakai1
  • International Workshop on Dielectric Thin Films for future electron devices science and technologyA2017”N11ŒŽ20“ú`11ŒŽ22“ú
  1. "Resistive Switching Characteristics of Four-Terminal TiO2-x Single Crystal Memristive Devices" Takuma Shimizu, Shotaro Takeuchi, Tetsuya Tohei, Akira Sakai
  • "Analysis of Ti Valence State in Resistive Switching Region of Rutile TiO2-x Four-Terminal Memristive Device " Kengo Yamaguchi, Shotaro Takeuchi, Tetsuya Tohei, Akira Sakai
    • ‘æ6‰ñŒ‹»HŠw–¢—ˆmA“Œ‹ž‘åŠw‹îêƒLƒƒƒ“ƒpƒXæ’[‰ÈŠw‹ZpŒ¤‹†ƒZƒ“ƒ^[A2017”N11ŒŽ2“ú
    1. "ƒiƒmƒr[ƒ€Xü‰ñÜ–@‚É‚æ‚é‚Ge‘g¬SiGe/‘g¬ŒXŽÎSiGe‚ÌŒ‹»[‚³•ûŒü’f‘wƒ}ƒbƒsƒ“ƒO‰ðÍ" Žu“c˜aŒÈA’|“೑¾˜YA¡ˆäN•FA–Ø‘ºŽ AAndreas SchulzeAMatty CaymaxAŽðˆä˜N
    • ‘æ78‰ñ‰ž—p•¨—Šw‰ï H‹GŠwpu‰‰‰ïA•Ÿ‰ª‘Û‰ï‹cêE‘ÛƒZƒ“ƒ^[E•Ÿ‰ªƒTƒ“ƒpƒŒƒXA2017”N9ŒŽ6“ú
    1. "4’[ŽqTiO2’PŒ‹»\‘¢ƒƒ‚ƒŠƒXƒ^‚Ì’ïR•Ï‰»“Á«" ´…‘ñ–A’|“೑¾˜YA“¡•½“N–çAŽðˆä˜N
    2. "ƒ‹ƒ`ƒ‹Œ^TiO2’PŒ‹»”÷׃ƒ‚ƒŠƒXƒ^‘fŽq‚É‚¨‚¯‚é’ïR•Ï‰»—̈æ‚ÌTEM”÷\‘¢‰ðÍ" ŽRŒûŒ«ŒáC ‘ºãO–íC´…‘ñ–C’|“೑¾˜YC“¡•½“N–çCŽðˆä˜N
    3. "ƒiƒmƒr[ƒ€Xü‰ñÜ–@‚É‚æ‚éŽüŠúa‰ÁHŠî”ÂãAlNŒú–Œ‚ÌŒ‹»[‚³•û"Žu“c˜aŒÈA ’|“೑¾˜YA “¡•½“N–çAŽO‘îGlA•½¼˜a­A‹÷’J˜aŽkA¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜N
    4. "ˆ³“d‰ž“šŒ°”÷‹¾–@‚É‚æ‚éNaƒtƒ‰ƒbƒNƒXGaN’PŒ‹»‚Ì‹ÇŠˆ³“d•¨«‰ðÍ" A“c ‰l, ’|“೑¾˜Y, “¡•½“N–ç, ¡¼³K, ¡oŠ®, X—E‰î, Žðˆä˜N
    5. "Naƒtƒ‰ƒbƒNƒXGaN’PŒ‹»“à‚̌Ǘ§“]ˆÊ‚É‹Nˆö‚µ‚½‹ÇŠ˜R‚ê“d—¬“Á«" à_’nˆÐ–¾, ’|“೑¾˜Y, “¡•½“N–ç, ¡¼³K, ¡oŠ®, X—E‰î, Žðˆä˜N
    • 29th International Conference on Defects in SemiconductorsA¼]‚­‚É‚Ñ‚«ƒƒbƒZA2017”N7ŒŽ31“ú`8ŒŽ4“ú
    1. "Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy" T. Hamachi1, S. Takeuchi1, T. Tohei1, M. Imanishi2, M. Imade2, Y. Mori2, A. Sakai1
    2. "Characterization of local piezoelectric property in Na-flux GaN bulk single crystals" A. Ueda1, S. Takeuchi1, T. Tohei1, M. Imanishi2, M. Imade2, Y. Mori2, A. Sakai1
    3. "In depth microstructural analysis of heteroepitaxial AlN thick films grown on trench-patterned templates by nanobeam X-ray diffraction" KKazuki Shida1, Shotaro Takeuchi1, Tetsuya Tohei1, Hideto Miyake2,3, Kazumasa Hiramatsu3, Kazushi Sumitani4, Yasuhiko Imai4, Shigeru Kimura4, Akira Sakai1
    • ‘æ73‰ñ“ú–{Œ°”÷‹¾Šw‰ïŠwpu‰‰‰ïAŽD–yƒRƒ“ƒxƒ“ƒVƒ‡ƒ“ƒZƒ“ƒ^[A2017”N5ŒŽ31“ú
    1. "ƒ‹ƒ`ƒ‹Œ^TiO2’PŒ‹»ƒƒ‚ƒŠƒXƒ^”÷בfŽq‚É‚¨‚¯‚é’ïR•Ï‰»—̈æ‚ÌŒ‹»\‘¢‰ðÍ" ‘ºãO–íAŽRŒûŒ«ŒáA´…‘ô–A’|“೑¾˜YAŽðˆä˜N
    • ‘æ64‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïAƒpƒVƒtƒBƒR‰¡•lA2017”N3ŒŽ14“ú\17“ú
    1. gƒ‹ƒ`ƒ‹Œ^TiO2’PŒ‹»‚ÌŽ_‘f‹óE•ª•z‚É‚æ‚é’ïR•Ï‰»‚ÌŒJ•Ô‚µ“Á«"@´…‘ñ–A’|“೑¾˜YAŽðˆä˜N
    2. gƒ‹ƒ`ƒ‹Œ^TiO2’PŒ‹»ƒƒ‚ƒŠƒXƒ^‘fŽq‚Ì’ïR•Ï‰»—̈æ‚É‚¨‚¯‚鉿“dŽqó‘Ô‰ðÍ"AŽRŒûŒ«ŒáA’|“೑¾˜YAŒÜ\—’MsAŽðˆä˜N
    3. "•\‘wŒÅ—nŽ_‘f”Z“x‚ð§Œä‚µ‚½‹É”–ƒVƒŠƒRƒ“ƒEƒF[ƒn‚Ì컂ƓÁ«"A•êƒ––ì˜a”üA’|“೑¾˜YA{“¡Ž¡¶A–ؗ³•FAr–Ø_ŽiAòÈGŽ¡AŽðˆä˜N
    2016
    • The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    1. gInterface and dislocation structures in Na flux GaN grown on MOCVD-GaNh, S. Takeuchi, H. Asazu, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, and A. Sakai, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), August 7th - 12th, 2016, Nagoya, Japan.
    2. gTomographic mapping analysis of high Ge content SiGe epitaxial films with compositionally graded layers by X-ray microdiffractionh, K. Shida, S. Takeuchi, Y. Imai, S. Kimura, and A. Sakai, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), August 7th - 12th, 2016, Nagoya, Japan.
    • 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016)
    1. gCharacterization of local strain in nanoscale strained SiGe FinFET structuresh, S. Mochizuki, C. E. Murray, A. Madan, T. Pinto, Y. Y. Wang, J. Li, W. Weng, H. Jagannathan, Y. Imai, S. Kimura, S. Takeuchi, and A. Sakai, 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016), June 7-11, 2016, Nagoya, Japan
    • The 20th SANKEN International The 15th SANKEN Nanotechnology Symposium
    1. gNanobeam X-ray diffraction for tomographic mapping analysis of high Ge content Si1-yGey/compositionally graded Si1-xGex stacked structureh, K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Shulze, M. Caymax, and A. Sakai, The 20th SANKEN International The 15th SANKEN Nanotechnology Symposium, December 12-13, 2016, Osaka, Japan.
    2. gReversible resistive switching by the voltage-driven control of oxygen vacancy distribution in four terminal planar TiO2-x-based devicesh, T. Shimizu, M. Shimotani, S. Takeuchi, and A. Sakai, The 20th SANKEN International The 15th SANKEN Nanotechnology Symposium, December 12-13, 2016, Osaka, Japan.
    3. gLattice plane microstructure analysis of Na-flux GaN bulk crystals by nanobeam X-ray diffractionh, Y. Mizuta, S. Takeuchi, M. Imanishi, M. Imade, Y. Imai, S. Kimura, Y. Mori, and A. Sakai, The 20th SANKEN International The 15th SANKEN Nanotechnology Symposium, December 12-13, 2016, Osaka, Japan.
    • The 7th International Symposium on Advanced Science and Technology of Silicon Materials
    1. gTomographic mapping analysis of high Ge composition SiGe layers with compositionally graded buffers by Nanobeam X-ray diffractionh, K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Shulze, M. Caymax, and A. Sakai, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, November 21-25, 2016, Hawaii, USA.
    2. gNano beam X-ray diffraction analysis of microstructures in Na-flux GaN bulk crystals grown with controlling seed crystal surfaces and growth modeh, Y. Mizuta, S. Takeuchi, M. Imanishi, M. Imade, Y. Imai, S. Kimura, Y. Mori, and A. Sakai, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, November 21-25, 2016, Hawaii, USA.
    3. gDemonstration of reversible resistive switching by the control of oxygen vacancy distribution in rutile TiO2-x single crystalsh, T. Shimizu, M. Shimotani, S. Takeuchi, and A. Sakai, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, November 21-25, 2016, Hawaii, USA.
    • International Workshop on Nitride Semiconductors
    1. gThree-Dimensional Reciprocal Space Mapping Analysis for Localized Structures and Defects in Nitride Semiconductor Materialsh, A. Sakai, and S. Takeuchi, International Workshop on Nitride Semiconductors, October 2-7, 2016, Orlando, Florida, USA.
    • H‹G‰ž—p•¨—Šw‰ï
    1. "Xüƒ}ƒCƒNƒ‰ñÜ‚É‚æ‚éŽíŒ‹»•\–ÊE¬’·ƒ‚[ƒh§ŒäNaƒtƒ‰ƒbƒNƒXGaN‚Ì”÷Ž‹“IŒ‹»\‘¢‰ðÍ"A…“c—S‹MA’|“೑¾˜YA¡¼³KA¡oŠ®A¡ˆäN•FA–Ø‘ºŽ AX—E‰îAŽðˆä˜NA‘æ77‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïAŽé냃bƒZA2016”N9ŒŽ13“ú\16“ú
    2. "ƒ‹ƒ`ƒ‹Œ^TiO2’PŒ‹»‚ÌŽ_‘f‹óE•ª•z§Œä‚Æ’ïR•Ï‰»“Á«"A´…‘ñ–A’|“೑¾˜YAŽðˆä˜NA‘æ77‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïAŽé냃bƒZA2016”N9ŒŽ13“ú\16“ú
    • t‹G‰ž—p•¨—Šw‰ï
    1. "ƒ‹ƒ`ƒ‹Œ^TiO2’PŒ‹»‚ÌŽ_ ‘f‹óE•ª•z§Œä‚Æ’ïR•Ï‰»“Á«"A‰º’J«lA’|“೑¾˜YAŽðˆä˜NA‘æ63‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïA“Œ‹ž H‹Æ‘åŠw‘剪ŽRƒLƒƒƒ“ƒpƒXA2016”N3ŒŽ19“ú\22“ú
    2. "Xüƒ}ƒCƒNƒ‰ñÜ‚É‚æ‚é‚Ge‘g¬SiGe/‘g¬ŒXŽÎ‘w‚ÌŒ‹»«’f‘wƒ}ƒbƒsƒ“ ƒO‰ðÍ"AŽu“c˜aŒÈA’|“೑¾˜YA¡ˆäN •FA–Ø‘ºŽ AŽðˆä˜NA‘æ63‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïA “Œ‹žH‹Æ‘åŠw‘剪ŽRƒLƒƒƒ“ƒpƒXA2016”N3ŒŽ19“ú\22“ú
    3. "ŽíŒ‹»GaN•\–Ê‚¨ ‚æ‚Ѭ’·ƒ‚[ƒh‚ð§Œä‚µ‚½Naƒtƒ‰ƒbƒNƒXGaN‚ÌŒ‡Š×\‘¢‰ðÍ"A…“c —S‹MA’|“೑¾˜YA¡¼³KA¡oŠ®AX—E‰îAŽðˆä˜NA‘æ63‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïA “Œ‹žH‹Æ‘åŠw‘剪ŽRƒLƒƒƒ“ƒpƒXA2016”N3ŒŽ19“ú\22“ú
    4. "ƒGƒsƒ^ƒLƒVƒƒƒ‹Geƒiƒm ƒhƒbƒgŠÜ—LSi\‘¢‚ð—p‚¢‚½SiŒn”M“dÞ—¿‚Ì«”\Œüã"AŽRã Ži—SlA“n•ÓŒ’‘¾˜YAàV–쌛‘¾˜YA’|“೑¾˜YAŽðˆä˜NA’†‘º–F–¾A‘æ63‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïA “Œ‹žH‹Æ‘åŠw‘剪ŽRƒLƒƒƒ“ƒpƒXA2016”N3ŒŽ19“ú\22“ú
    5. "yu‰‰§—ãÜŽóÜ‹L”Ou‰‰zXüƒ}ƒC ƒNƒ‰ñÜ‚ð—p‚¢‚½3ŽŸŒ³‹tŠiŽqƒ}ƒbƒv‰ðÍ‚É‚æ‚é’‚‰»•¨”¼“±‘ÌŒ‹»\‘¢‰ðÍ"AŠ™“cË•½A’|“೑¾˜YAƒfƒBƒ“ ƒ^ƒ“ƒJƒ“AŽO‘îGlA•½¼˜a­A¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜NA‘æ63‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïA “Œ‹žH‹Æ‘åŠw‘剪ŽRƒLƒƒƒ“ƒpƒXA2016”N3ŒŽ19“ú\22“ú
    6. "3ŽŸŒ³‹tŠiŽq‹óŠÔƒ}ƒbƒv‰ð Í‚É‚æ‚éŽüŠúaSiCŠî”ÂãAlNŒú–Œ‚Ì”÷Ž‹“IŒ‹»\‘¢•] ‰¿"AŠ™“cË•½A’|“೑¾ ˜YAƒfƒBƒ“ƒ^ƒ“ƒJƒ“AŽO‘îGlA•½¼˜a­A¡ˆäN•FA–Ø‘ºŽ AŽðˆä˜NA‘æ63‰ñ‰ž—p•¨—Šw‰ït‹GŠwp u‰‰‰ïA“Œ‹žH‹Æ‘åŠw‘剪ŽRƒLƒƒƒ“ƒpƒXA2016”N3ŒŽ19“ú\22“ú
    2015
    • 23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)
    1. gObservation of covering epitaxial ƒÀ-FeSi2 nanodots with Si for fabricating Si/ƒÀ-FeSi2 nanodots stacked structuresh, S. Sakane, K. Watanabe, M. Isogawa, S. Takeuchi, A. Sakai, and Y. Nakamura, 23rd International Colloquium on Scanning Probe Microscopy (ICSPM23), December 10-12, Hokkaido, Japan
    2. gEpitaxial growth of iron oxide nanodots on Si substrate using Fe-coated Ge nucleih, T. Ishibe, K. Watanabe, S. Takeuchi, A. Sakai, and Y. Nakamura, 23rd International Colloquium on Scanning Probe Microscopy (ICSPM23), December 10-12, Hokkaido, Japan
    • 3rd Kansai Nanoscience and Nanotechnology/11th Handai Nanoscience and Nanotechnology International Symposium
    1. gCrystalline structure analysis of nitride semiconductors by three-dimensional reciprocal space mapping using X-ray microdiffractionh, S. Kamada, S. Takeuchi, D. T. Khan, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, 3rd Kansai Nanoscience and Nanotechnology/11th Handai Nanoscience and Nanotechnology International Symposium, December 7-9, 2015, Osaka University, Japan
    2. gResistive switching properties and structural change of rutile TiO2 crystalh, M. Shimotani, H. Murakami, S. Takeuchi, and A. Sakai, 3rd Kansai Nanoscience and Nanotechnology/11th Handai Nanoscience and Nanotechnology International Symposium, December 7-9, 2015, Osaka University, Japan
    • The 6th International Symposium on Growth of III-Nitrides
    1. gPositional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substratesh, T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai, The 6th International Symposium on Growth of III-Nitrides, November 8-13, 2015, Hamamatsu, Japan.
    • International Conference on Thermoelectrics - ICT2015
    1. gThermal conductivity reduction and carrier doping in the Si nanoarchitecture including epitaxial nanodotsh, Y. Nakamura, T. Ueda, M. Isogawa, S. Yamasaka, S. Takeuchi, and A. Sakai, International Conference on Thermoelectrics ? ICT2015, June 28 ? July 2, 2015, Dresden, Germany.
    2. gPhonon scattering control by structure of epitaxial Ge nanodots in Sih, S. Yamasaka, Y. Nakamura, S. Takeuchi, and A. Sakai, International Conference on Thermoelectrics ? ICT2015, June 28 ? July 2, 2015, Dresden, Germany.
    • Œ‹»HŠw–¢—ˆm
    1. "Xüƒ}ƒCƒNƒ‰ñÜ‚ð—p‚¢‚½3ŽŸŒ³‹tŠiŽqƒ}ƒbƒv‰ðÍ‚É‚æ‚é’‚‰»•¨”¼“±‘ÌŒ‹»\‘¢‰ðÍ"C Š™“cË•½C’|“೑¾˜YCDinh Than KhanCŽO‘îGlC•½¼˜a ­C ¡ˆäN•FC–Ø‘ºŽ CŽðˆä˜NC ‘æ4‰ñŒ‹»HŠw–¢—ˆmFŒ¤‹†ƒ|ƒXƒ^[”­•\‰ï, “Œ‹ž”_H‘åŠw, 2015”N11ŒŽ29“ú.
    • H‹G‰ž—p•¨—Šw‰ï
    1. "ƒ‹ƒ`ƒ‹Œ^TiO2’PŒ‹»‚Ì’ïR•Ï‰»“Á«‚ÆŒ‹»\‘¢•Ï‰»"C ‰º’J«lC‘ºãO–íC’|“೑¾˜YCŽðˆä˜NC ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“ú
    2. "SiŠî ”Âã‚–§“xƒGƒsƒ^ƒLƒVƒƒƒ‹“SŽ_‰»•¨ƒiƒmƒhƒbƒg‚ÌŒ`¬‚ƃXƒCƒbƒ`ƒ“ƒO“Á«"C “n•ÓŒ’‘¾˜YC‘O“c‰À‹PC’†–{—I‘¾C¼ˆäG‹IC’|“೑¾˜YCŽðˆä˜NC’†‘º–F–¾C ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“úD
    3. "ƒGƒsƒ^ƒLƒVƒƒƒ‹Fe3O4-ƒÂƒiƒmƒhƒbƒg/SiŠî”‚ɂ¨‚¯‚é’ïRƒXƒCƒbƒ`ƒ“ƒO“Á«‚̬’·‰·“xˆË‘¶«"C ‘O“c‰À‹PC“n•ÓŒ’‘¾˜YC’†–{—I‘¾C¼ˆäG‹IC’|“೑¾˜YCŽðˆä˜NC’†‘º–F–¾C ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“úD
    4. "ƒGƒsƒ^ƒLƒVƒƒƒ‹GeƒiƒmƒhƒbƒgŠÜ—LSi”––Œ‚É‚¨‚¯‚é”M“d“Á«§Œä"C ŽRãŽi—SlC“n•ÓŒ’‘¾˜YCàV–쌛‘¾˜YC’|“೑¾˜YCŽðˆä˜NC’†‘º–F–¾C ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“úD
    5. "ƒÀ-FeSi2ƒiƒmƒhƒbƒgÏ‘w\‘¢‚É‚¨‚¯‚é”M“d“Á«‚ÌŽx”z—vˆö"C âªx–çC“n•ÓŒ’‘¾˜YC’|“೑¾˜YCŽðˆä˜NC’†‘º–F–¾C ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“úD
    6. "Xüƒ}ƒCƒNƒ‰ñÜ–@‚É‚æ‚锼‹É«–Ê(20-21)GaNŒú–Œ‚ÌŒ‡Š×•ª•z•]‰¿"C “àŽR¯˜YC’|“೑¾˜YCr“à‘ôŽmC‹´–{Œ’GCŽRªŒ[•ãC‰ª“c¬mC¡ˆäN•FC–Ø‘ºŽ C‘ü—FˆêsCŽðˆä˜NC ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“úD
    7. "’‚‰»•¨”¼“±‘̬̂’·•\–ÊEŠE–ʧŒä‚Æ“]ˆÊ‹““®\Naƒt ƒ‰ƒbƒNƒX¬’·GaNŒ‹»‚ð’†S‚É\"C Žðˆä˜NCó’ÃG“`C’|“೑¾˜YC’†‘º–F–¾C¡¼³KC¡oŠ®CX—E‰îC ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“úD
    8. "Xüƒ}ƒCƒNƒ‰ñÜ–@‚ð—p‚¢‚½3ŽŸŒ³‹tŠiŽqƒ}ƒbƒv‰ðÍ‚É‚æ‚é’‚‰»•¨”¼“±‘ÌŒ‹»\‘¢•]‰¿"CŠ™“cË•½C’|“à³ ‘¾˜YC ƒfƒBƒ“ƒ^ƒ“ƒJƒ“CŽO‘îGlC•½¼˜a­C¡ˆäN•FC–Ø‘ºŽ CŽðˆä˜NC ‘æ76‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC–¼ŒÃ‰®‘Û‰ï‹cêC2015”N9ŒŽ13“ú-16“úD
    • t‹G‰ž—p•¨—Šw‰ï
    1. "Naƒtƒ‰ƒbƒNƒXŒ‹‡¬’·–@‚Å컂µ‚½GaNƒoƒ‹ƒNŒ‹»‚É‚¨‚¯‚鬒·‰ŠúŠE–Ê‚ÌŒ‡Š×\‘¢‰ðÍ"Có’ÃG“`C’|“೑¾˜YC¡¼³KC’†‘º–F–¾C¡oŠ®CX—E‰îCŽðˆä˜NC @‘æ62‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïC“ŒŠC‘åŠwC2015”N3ŒŽ11“ú-14“úD
    2. "“SƒVƒŠƒTƒCƒhŠj/Si‚ð—p‚¢‚½“SŽ_‰»•¨‚̃Gƒsƒ^ƒLƒVƒƒƒ‹¬’·"C¼ˆäG‹IC’†‘º–F–¾C’†–{—I‘¾C’|“೑¾˜YCŽðˆä˜NC ‘æ62‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïC“ŒŠC‘åŠwC2015”N3ŒŽ11“ú-14“úD
    3. "‹É”–Al2O3/SiO2 BOX‘w‚ð—L‚·‚é“\‚臂킹GeOIŠî”‚̔Mˆ—‚É‚æ‚é“d‹C“Á«‰ü‘P"C‹g“cŒ[Ž‘C’†‘º–F–¾C’|“೑¾˜YCŽçŽR‰À•FCŽè’Ë•×CŽðˆä˜NC ‘æ62‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïC“ŒŠC‘åŠwC2015”N3ŒŽ11“ú-14“úD
    4. "Si’† ƒGƒsƒ^ƒLƒVƒƒƒ‹Geƒiƒmƒhƒbƒg‚ð—p‚¢‚½”M’ïR§Œä"CŽRãŽi—SlC’†‘º–F–¾Cã“c’qLC’|“೑¾˜YC Žðˆä˜NC ‘æ62‰ñ‰ž—p•¨—Šw‰ït‹GŠwp u‰‰‰ïC“ŒŠC‘åŠwC2015”N3ŒŽ11“ú-14“úD
    2014
    • Œ‹»HŠw–¢—ˆm
    1. "•\‘wŒÅ—n’‚‘f”Z“x‚ª§Œä‚³‚ꂽSiƒEƒF[ƒn‚̃fƒoƒCƒXŠˆ«—̈æ‚É‚¨‚¯‚é“]ˆÊ‹““®"C’·‹vW•ãC’| “೑¾˜Y, ó’ÃG“`, ’†‘º–F–¾, {“¡Ž¡¶, r–Ø_Ži, òÈGŽ¡CŽðˆä˜N, @‘æ3‰ñŒ‹»HŠw–¢—ˆmFŒ¤‹†ƒ|ƒXƒ^[”­•\‰ï, ŠwK‰@‘åŠw, 2014”N11ŒŽ13“ú.
    2. "Žü Šúa‰ÁHŠî”Â㔼‹É«–Ê(20-21)GaN–Œ‚Ì”÷Ž‹“IŒ‹»\‘¢‰ðÍ`Xü ƒ}ƒCƒNƒ‰ñÜ‚Æ“§‰ßŒ^“dŽqŒ°”÷‹¾‚ð—p‚¢‚½‘Š•â“I•]‰¿`"C r“à‘ôŽmC’|“೑¾˜YC‹´–{Œ’GC’†‘º–F–¾C¡ˆäN•FCŽRªŒ[•ãC‰ª“c¬mC–Ø‘ºŽ C‘ü—FˆêsCŽðˆä˜NC @‘æ3‰ñŒ‹»H Šw–¢—ˆmFŒ¤‹†ƒ|ƒXƒ^[”­•\‰ï, ŠwK‰@‘å Šw, 2014”N11ŒŽ13“ú.
    • H‹G‰ž—p•¨—Šw‰ï
    1. "ŽüŠúa‰ÁH(22-43)ƒTƒtƒ@ƒCƒAŠî”Â㔼‹É«–Ê(20-21)GaN‚Ì”÷Ž‹“IŒ‹»\‘¢‰ðÍ"Cr“à‘ôŽmC’|“೑¾˜YC‹´–{Œ’GC’†‘º–F–¾C¡ˆäN•FCŽRªŒ[•ãC‰ª“c¬mC–Ø‘ºŽ C‘ü—FˆêsCŽðˆä˜NC @‘æ75‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC –kŠC“¹‘åŠwC2014”N9ŒŽ17“ú-20“úD
    2. "Xü‰ñÜ–@‚É‚æ‚锼‹É«(20-21)GaN–Œ‚Ì–ŒŒúE¬’·ðŒˆË‘¶«•]‰¿"C“àŽR¯˜YC’|“೑¾˜YCr“à‘ôŽmC‹´–{Œ’GC’†‘º–F–¾CŽRªŒ[•ãC‰ª“c¬mC‘ü—FˆêsCŽðˆä˜NC @‘æ75‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC –kŠC“¹‘åŠwC2014”N9ŒŽ17“ú-20“úD
    3. "ƒGƒsƒ^ƒLƒVƒƒƒ‹“SƒVƒŠƒTƒCƒhƒiƒm ƒhƒbƒgÏ‘w\‘¢‚Ì”M“d“Á«"CŽRãŽi—SlC’†‘º–F–¾C’ßèW–çC’|“೑¾˜YCŽðˆä˜NC @‘æ75‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC –kŠC“¹‘åŠwC2014”N9ŒŽ17“ú-20“úD
    4. "’‚‰»•¨”¼“±‘ÌŒ‹»“ÁˆÙ\‘¢‚Ì\‘¢ ‰ðÍ•]‰¿|ƒ}ƒ‹ƒ`ƒXƒP[ƒ‹•]‰¿‚ւ̃Aƒvƒ[ƒ`|"CŽðˆä˜NC’|“೑¾˜YC’†‘º–F–¾CŽO‘îGlC•½¼˜a­C¡ˆäN•FC–Ø‘ºŽ C @‘æ75‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC –kŠC“¹‘åŠwC2014”N9ŒŽ17“ú-20“úD
    5. "SiŠî”ÂãƒGƒsƒ^ƒLƒVƒƒƒ‹Fe2O3ƒiƒmƒhƒbƒg‚Ì’ïR•Ï‰»“Á«‚Æ‚»‚Ì ƒAƒj[ƒ‹ˆ—ˆË‘¶«"C¼ˆäG‹IC’†‘º–F–¾C’|“೑¾˜YCŽðˆä˜NC @‘æ75‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ïC –kŠC“¹‘åŠwC2014”N9ŒŽ17“ú-20“úD
    6. "SiƒEƒF[ ƒn‚Ì‹È‚°‹­“x‚ɑ΂·‚é•\‘w’‚‘f”Z“x‚̉e‹¿"C{“¡Ž¡¶Cr–Ø_ŽiC“ú‚—m”üCr–؉„ŒbC’|“೑¾˜YC’†‘º–F–¾CŽðˆä˜NCòÈGŽ¡C ‘æ75‰ñ‰ž—p•¨—Šw‰ïH‹GŠwp u‰‰‰ïC–kŠC“¹‘åŠwC2014”N9ŒŽ17“ú-20“úD
    • 1st KANSAI Nanoscience and Nanotechnology International Symposium
    1. "Introduction of Ultrahigh Density Ge Nanodots into Si Films for Si Based Thermoelectric Materials", S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi and A. Sakai, 1st Kansai NanoScience and Nanotechnology International Symposium, Osaka, Japan, Feb. 4 2014.
    2. "Anomalous reduction of thermal conductivity of stacked epitaxial Si nanodot structures", Y. Nakamura and A. Sakai, 1st Kansai NanoScience and Nanotechnology International Symposium, Osaka, Japan, Feb. 4 2014.
    • t‹G‰ž—p•¨—Šw‰ï
    1. "ƒGƒsƒ^ƒLƒVƒƒƒ‹Geƒiƒmƒhƒbƒg‚ð—L‚·‚éSi”M“d”––Œ‚Ì“d‹C“Á«•]‰¿", ŽRãŽi—Sl, ’†‘º–F–¾, ã“c’qL, ’|“೑¾˜Y, Žðˆä˜N, ‘æ61‰ñ‰ž—p•¨—Šw‰ïtŠúŠwpu‰‰‰ïAÂŽRŠw‰@‘åŠwA2014”N3ŒŽ17“ú-3ŒŽ20“ú.
    2. "‹É”–SiŽ_‰»–Œ‹Zp‚ð—p‚¢‚ăGƒsƒ^ƒLƒVƒƒƒ‹¬’·‚µ‚½SiŠî”ÂãFe3O4ƒiƒmƒhƒbƒg‚Ì’ïRƒXƒCƒbƒ`ƒ“ƒO“Á«", ¼ˆäG‹I, ’†‘º–F–¾, ’|“೑¾˜Y, Žðˆä˜N, ‘æ61‰ñ‰ž—p•¨—Šw‰ïtŠúŠwpu‰‰‰ïAÂŽRŠw‰@‘åŠwA2014”N3ŒŽ17“ú-3ŒŽ20“ú.
    3. "Al2O3‘}“ü‘w‚ð—L‚·‚é“\‚臂킹GeOIŠî”‚̓d‹C“Á«•]‰¿", ‹g“cŒ[Ž‘, ’†‘º–F–¾, ’|“೑¾˜Y, ŽçŽR‰À•F, Žè’Ë•×, Žðˆä˜N, ‘æ61‰ñ‰ž—p•¨—Šw‰ïtŠúŠwpu‰‰‰ïAÂŽRŠw‰@‘åŠwA2014”N3ŒŽ17“ú-3ŒŽ20“ú.
    4. "Crystal domain microstructure analysis of a thick AlN film grown on a trench-patterned AlN/sapphire template by X-ray microdiffraction"CD. T. Khan, S. Takeuchi, K. Nakamura, T. Arauchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, ‘æ61‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, ÂŽRŠw‰@‘åŠw, 2014”N3ŒŽ17“ú-3ŒŽ20“ú.
    5. "Naƒtƒ‰ƒbƒNƒXŒ‹‡¬’·–@‚É‚¨‚¯‚鬒·ƒnƒrƒbƒg‚Æ“]ˆÊ‹““®‚ÌŠÖŒW"C¡¼³KC‘ºãq‰îC ¡—ÑO‹BC‚àVG¶C¼”ö‘å•ãCŒ—[–€CŠÛŽR”ü”¿ŽqCó’ÃG“`C’|“೑¾˜YC’†‘º–F–¾CŽðˆä˜NC¡oŠ®C‹g‘º­ŽuCX—E‰îC ‘æ61‰ñ ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, ÂŽRŠw‰@‘åŠw, 2014”N3ŒŽ17“ú-3ŒŽ20“ú.
    6. "Ge-nMOSFETŒü‚¯n+-Ge/n+-SiGeÏ ‘wƒXƒgƒŒƒbƒT[‚É‚æ‚éGeƒ`ƒƒƒlƒ‹‚ւ̂Ђ¸‚Ý“±“ü‚¨‚æ‚ÑŠñ¶’ïR‚̒ጸ"C ŽçŽR‰À•FCã–´“c—YˆêCŠ™“c‘PŒÈC’r“cŒ\ŽiC’|“೑¾˜YC’†‘º–F–¾CŽðˆä˜NCŽè’Ë•×C ‘æ61‰ñ ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, ÂŽRŠw‰@‘åŠw, 2014”N3ŒŽ17“ú-3ŒŽ20“ú.
    • 2014 MRS Fall Meeting & Exhibit
    1. "Microstructure Analysis of a Thick AlN Film Grown on a Trench-Patterned AlN/Sapphire Template by X-Ray Microdiffraction", S. Takeuchi, D. T. Khan, Y. Nakamura, Y. Imai, S. Kimura, H. Miyake, K. Hiramatsu, and A. Sakai, 2014 MRS Fall Meeting & Exhibit, November 30 - December 5, 2014, Boston, Massachusetts.
    • The 7th Forum on the Science and Technology of Silicon Materials 2014
    1. "Effect of surface-nitrogen-concentration on dislocation behavior in Si wafers treated by high temperature rapid thermal nitridation", S. Chokyu, S. Takeuchi, H. Asazu, Y. Nakamura, H. Sudo, K. Araki, K. Izunome, and A. Sakai, The 7th Forum on the Science and Technology of Silicon Materials 2014, October 19-22, 2014, Hamamatsu, Japan.
    • International Workshop on Nitride Semiconductors
    1. "Behaviors of dislocations in GaN crystals grown on point seeds in the Na-Flux coalescence growth", M. Imanishi, K. Murakami, K. Nakamura, H. Imabayashi, H. Takazawa, D. Matsuo, Y. Todoroki, M. Maruyama, H. Asazu, S. Takeuchi, Y. Nakamura, A. Sakai, M. Imade, M. Yoshimura, and Y. Mori, International Workshop on Nitride Semiconductors, August 24-29, 2014, Wroclaw, Poland.
    2. "Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction", T. Arauchi, S. Takeuchi, Y. Nakamura, Y. Imai, K. Yamane, N. Okada, S. Kimura, K. Tadatomo, and A. Sakai, International Workshop on Nitride Semiconductors, August 24-29, 2014, Wroclaw, Poland.
    3. "Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films on (22-43) patterned sapphire substrate", T. Uchiyama, S. Takeuchi, T. Arauchi, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, and A. Sakai, International Workshop on Nitride Semiconductors, August 24-29, 2014, Wroclaw, Poland.
    • International Conference on Thermoelectrics - ICT2014
    1. "Thermal and electrical properties of Si films including epitaxial Ge nanodot phonon-scatterers", S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi, and A. Sakai, International Conference on Thermoelectrics - ICT2014, July 6-10, 2014, Nashville, Tennessee.
    • 7th International SiGe Technology and Device Meeting
    1. "Improvement of current drive of Ge-nMISFETs by epitaxially grown n+-Ge :P source and drain", Y. Moriyama, K. Kamimuta, Y. Kamata, K. Ikeda, S. Takeuchi, Y. Nakamura, A. Sakai, and T. Tezuka, 7th International SiGe Technology and Device Meeting, June 2-4, 2014, Swissotel Merchant Court, Singapore.
    2013
    • t‹G‰ž—p•¨—Šw‰ï
    1. "ƒGƒsƒ^ƒLƒVƒƒƒ‹Geƒiƒmƒhƒbƒg‚ð—L‚·‚éSi”M“d”––Œ‚Ì“d‹C“Á«•]‰¿", ŽRãŽi—Sl, ’†‘º–F–¾, ã“c’qL, ’|“೑¾˜Y, Žðˆä˜N,‘æ61‰ñ‰ž—p•¨—Šw‰ïtŠúŠwpu‰‰‰ïAÂŽRŠw‰@‘åŠwA2013”N3ŒŽ17“ú-3ŒŽ20“ú.
    2. "Xüƒ}ƒCƒNƒ‰ñÜ‚É‚æ‚éŽüŠúa‰ÁHSiCŠî”Âã‚ɬ’·‚µ‚½AlN”––Œ‚ÌŒ‹»«•]‰¿", ’†‘º–M•FCƒfƒBƒ“ ƒJƒ“Cr“à‘ôŽmC’|“೑¾˜YC’†‘º–F–¾CŽO‘îGlC•½¼˜a­C¡ˆäN•FC–Ø‘º@Ž CŽðˆä@˜N, 2013”N@‘æ60‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, _“ÞìH‰È‘åŠw, 2013”N3ŒŽ27-3ŒŽ30“ú.
    3. "SiŠî”Âã‚Ö‚Ì“SŽ_‰»•¨ƒiƒmƒhƒbƒg‚̃Gƒsƒ^ƒLƒVƒƒƒ‹¬’·‚Æ‚»‚Ì“dŽqó‘Ô‘ª’è", Ε”‹MŽjC’†‘º–F–¾C¼ˆäG‹IC’|“೑¾˜YCŽðˆä@˜N, 2013”N@‘æ60‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, _“ÞìH‰È‘åŠw, 2013”N3ŒŽ27-3ŒŽ30“ú.
    4. "ƒGƒsƒ^ƒLƒVƒƒƒ‹b-FeSi2ƒiƒmƒhƒbƒgÏ‘w\‘¢‚ÌŒ`¬‚Æ‚»‚Ì”M“d•¨«", ŒÜ\ì‰ë”VC’†‘º–F–¾C‹gì@ƒC’|“೑¾˜YCŽðˆä@˜N, 2013”N@‘æ60‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, _“ÞìH‰È‘åŠw, 2013”N3ŒŽ27-3ŒŽ30“ú.
    5. "SiŒn”M“dÞ—¿‚É‚¨‚¯‚éƒGƒsƒ^ƒLƒVƒƒƒ‹ƒiƒmƒhƒbƒgŽU—‘Ì‚ÌŒ`¬‚Æ‚»‚Ì”M“`“±—¦•]‰¿", ŽRãŽi—SlC’†‘º–F–¾Cã“c’qLC’|“೑¾˜YCŽðˆä@˜N, 2013”N@‘æ60‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, _“ÞìH‰È‘åŠw, 2013”N3ŒŽ27-3ŒŽ30“ú.
    6. "•\‘wŽ_‘f”Z“x‚ª§Œä‚³‚ꂽSiƒEƒF[ƒn‚̃fƒoƒCƒXŠˆ«—̈æ‚É‚¨‚¯‚é“]ˆÊ‹““®", ó’ÃG“`C’|“೑¾˜YCŽR“àGÆC{“¡Ž¡¶Cr–Ø_ŽiC’†‘º–F–¾CòÈGŽ¡CŽðˆä@˜N, 2013”N@‘æ60‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, _“ÞìH‰È‘åŠw, 2013”N3ŒŽ27-3ŒŽ30“ú.
    • 8th International Conference on Si epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ICSI-8/ISCSI-VI)
    1. "Reduction of contact resistance on selectively grown phosphorus-doped n+-Ge layers", Y. Moriyama, Y. Kamata, K. Ikeda, S. Takeuchi, Y. Nakamura, A. Sakai, and T. Tezuka, 8th International Conference on Si Epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ICSI-8/ISCSI-VI), June 2nd - 6th 2013, Fukuoka, Japan.
    2. "Dislocation behavior of surface-oxygen-concentration controlled Si wafers", H. Asazu, S. Takeuchi, H. Sannai, H. Sudo, K. Araki, Y. Nakamura, K. Izunome, and A. Sakai, 8th International Conference on Si Epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ICSI-8/ISCSI-VI), June 2nd - 6th 2013, Fukuoka, Japan.
    3. "Quantitative evaluation of bonding strength of hybrid-box GeOI", Y. Moriyama, S. Takeuchi, K. Ikeda, Y. Kamimuta, A. Sakai, K. Izunome and T. Tezuka, 8th International Conference on Si Epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ICSI-8/ISCSI-VI), June 2nd - 6th 2013, Fukuoka, Japan.
    • “dŽqî•ñ’ÊMŠw‰ïƒVƒŠƒRƒ“Þ—¿EƒfƒoƒCƒXŒ¤‹†‰ï
    1. "SiŠî”Âã‚Ö‚Ì“SŽ_‰»•¨ƒiƒmƒhƒbƒg‚̃Gƒsƒ^ƒLƒVƒƒƒ‹¬’·‚Æ‚»‚Ì“dŽqó‘Ô‘ª’è", Ε”‹MŽjC’† ‘º–F–¾C¼ˆäG‹IC’|“೑¾˜YCŽðˆä@˜N, “dŽqî•ñ’ÊMŠw‰ïƒVƒŠƒRƒ“Þ—¿EƒfƒoƒCƒXŒ¤‹†‰ï, ‹@‰ïU‹»‰ïŠÙ, “Œ‹ž, 2013”N6ŒŽ18“ú.
    • The 32nd International Conference on Thermoelectrics
    1. "Introduction of Ge nanodots in Si films as phonon scatterers and the thermal conductivity reduction", Shuto Yamasaka, Yoshiaki Nakamura*, Tomohiro Ueda, S. Takeuchi, Y. Yamamoto, S. Arai, T. Tanji, N. Tanaka, A. Sakai, The 32nd International Conference on Thermoelectrics, Kobe, Japan, July 1, 2013.
    • Asia-Pasific Conference on Green Technology with Silicides and Related Materials
    1. "Epitaxial growth of stacked ƒÀ-FeSi2 nanodots on Si substrates and their thermoelectric properties", M. Isogawa, Y. Nakamura*, J. Kikkawa, S. Takeuchi and A. Sakai, Asia-Pasific Conference on Green Technology with Silicides and Related Materials, Tsukuba, Japan, July 29, 2013.
    • 10th International Conference on Nitride Semiconductors (ICNS-10)
    1. "Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template", T. Arauchi, S. Takeuchi, K. Nakamura, D. T. Khan, Y. Nakamura, H. Miyake, K. Hiramatsu, and A. Sakai, 10th International Conference on Nitride Semiconductors (ICNS-10), Gaylord National Hotel and Convention Center, Washington - DC Metropolitan Area, USA, August 25-30, 2013.
    • 15th International Conference on Defects Recognition, Imaging and Physics in Semiconductors
    1. "Variation of local residual strain and twist angle in growth direction of AlN films on trench-patterned 6H-SiC substrates", K. Nakamura, S. Takeuchi, D. T. Khan, T. Arauchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, 15th International Conference on Defects Recognition, Imaging and Physics in Semiconductors, Warsaw, Poland, September 15-19, 2013.
    • E-MRS 2013 FALL MEETING
    1. "In-situ P-doped Ge-rich SiGe selective epitaxy for strained Ge-nMISFETs", Y. Moriyama, Y. Kamimuta, Y. Kamata, K. Ikeda, S. Takeuchi, A. Sakai, and T. Tezuka, E-MRS 2013 FALL MEETING, Warsaw University of Technology, Poland, September 16-20, 2013.
    • 2013 JSAP-MRS Joint Symposia
    1. "Microscopic structure analysis of a thick AlN film grown on a trench-patterned AlN/sapphire template by X-ray microdiffraction", D. T. Khan, S. Takeuchi, K. Nakamura, T. Arauchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, 2013 JSAP-MRS Joint Symposia, Doshisha University, Kyoto, Japan, September 16-20, 2013.
    • H‹G‰ž—p•¨—Šw‰ï
    1. "Si’†ƒGƒsƒ^ƒLƒVƒƒƒ‹GeƒiƒmƒhƒbƒgŽU—‘Ì‚Ì”M“d“±—¦’ጸŒø‰Ê", ŽRãŽi—SlC’†‘º–F–¾Cã“c’qLC’|“೑¾˜YCŽðˆä˜N, ‘æ74‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, “¯ŽuŽÐ‘åŠwC2013”N9ŒŽ16“ú-20“ú.
    2. "ƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·n+-Ge:P‚ÌŠˆ«‰»—¦Œüã‚ÆTi“d‹É‚Æ‚ÌÚG’ïR’ጸ", ŽçŽR‰À•FCã–´“c—YˆêCŠ™“c‘PŒÈC’r“cŒ\ŽiC’|“೑¾˜YC’†‘º–F–¾CŽðˆä˜NCŽè’Ë•×, ‘æ74‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, “¯ŽuŽÐ‘åŠwC2013”N9ŒŽ16“ú-20“ú.
    3. "”––ŒAl2O3/SiO2 BOX‘w‚ð—L‚·‚éUTB-GeOIŠî”Âì»", ŽçŽR‰À•FC’r“cŒ\ŽiC’|“೑¾˜YCã–´“c—YˆêC’†‘º–F–¾CŽðˆä˜NCòÈGŽ¡CŽè’Ë•×, ‘æ74‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, “¯ŽuŽÐ‘åŠwC2013”N9ŒŽ16“ú-20“ú.
    4. "Xü‰ñÜ‚É‚æ‚éŽüŠúa‰ÁH\‘¢AlN/SapphireŠî”ÂãƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·AlNŒú–Œ‚ÌŒ‹»\‘¢‰ðÍ", r“à‘ôŽmC’|“೑¾˜YC’†‘º–M•FCKhan DhinC’†‘º–F–¾CŽO‘îGlC•½¼˜a ­CŽðˆä˜N, ‘æ74‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, “¯ŽuŽÐ‘åŠwC2013”N9ŒŽ16“ú-20“ú.
    • 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)/21th International colloquium on Scanning Probe Microscopy (ICSPM21)
    1. "Formation of ultrahigh density Fe-based nanodots on Si substrates by controlling Ge nuclei on ultrathin SiO2 film", R. Sugimoto, Y. Nakamura, H. Matsui, J. Kikkawa and A. Sakai,12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)/21th International colloquium on Scanning Probe Microscopy (ICSPM21), November 4 - 8, 2013, Tsukuba, Japan..
    2. "Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states", T. Ishibe, Y. Nakamura, H. Matsui, S. Takeuchi and A. Sakai, 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)/21th International colloquium on Scanning Probe Microscopy (ICSPM21),November 4 - 8, 2013, Tsukuba, Japan.
    3. "Reduction effect of thermal conductivity by introduction of epitaxial Ge nanodots in Si", S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi and A. Sakai, 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)/21th International colloquium on Scanning Probe Microscopy (ICSPM21),November 4 - 8, 2013, Tsukuba, Japan.
    2012
    • t‹G‰ž—p•¨—Šw‰ï
    1. "”¼“±‘ÌÞ—¿‹ÇŠ—̈æ‚É‚¨‚¯‚é”÷×\‘¢E˜c‚ÌXüƒ}ƒCƒNƒ‰ñÜ•]‰¿", Žðˆä@˜NC‹gì@ƒC’†‘º–F–¾C¡ˆäN•FCâ“cCgC–Ø‘º@Ž , 2012”Nt‹G@‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, ‘ˆî“c‘åŠw, 2012”N3ŒŽ15-3ŒŽ18“ú.
    2. "Electrical characterization of a SrTiO3 twist boundary bicrystal", Nishad KokateCPhanphuthanh SonC‹gì@ƒC’†‘º–F–¾CŽðˆä@˜N, 2012”Nt‹G@‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, ‘ˆî“c‘åŠw, 2012”N3ŒŽ15-3ŒŽ18“ú.
    3. "Study of the (0004) plane tilting in a thick AlN film grown on a trench-patterned ƒ¿-Al2O3 substrate by X-ray microdiffraction", Dinh Thanh KhanCŒ´“ciŽiC‹gì@ƒC’†‘º–F–¾CŽO‘îGlC•½¼˜a­C¡ˆäN•FC–Ø‘º@Ž Câ“cCgCŽðˆä@˜N, 2012”Nt‹G@‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, ‘ˆî“c‘åŠw, 2012”N3ŒŽ15-3ŒŽ18“ú.
    4. "ŽüŠúa\‘¢AlN‘w/ƒTƒtƒ@ƒCƒAŠî”Âã‚ÉŒ`¬‚³‚ꂽAlNŒú–Œ’†‚Ì“]ˆÊ\‘¢‰ðÍ", ‰ª–{ËŒáC‹gì@ƒC’†‘º–F–¾CŽO‘îGlC•½¼˜a³CŽðˆä@˜N, 2012”Nt‹G@‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, ‘ˆî“c‘åŠw, 2012”N3ŒŽ15-3ŒŽ18“ú.
    5. "Xüƒ}ƒCƒNƒ‰ñÜ–@‚É‚æ‚éGaNŽ©—§Šî”‚̌‹»«•]‰¿", Œ´“ciŽiC“nç³ãÄ‘åCKhan DinhC‹gì@ƒC’†‘º–F–¾CŽO‘îGlC•½¼˜a­C¡ˆäN•FC–Ø‘º@Ž Câ“cCgCŽðˆä@˜N, 2012”Nt‹G@‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, ‘ˆî“c‘åŠw, 2012”N3ŒŽ15-3ŒŽ18“ú.
    6. "ƒiƒmƒRƒ“ƒ^ƒNƒgƒGƒsƒ^ƒLƒV[‚É‚æ‚éSi(111)Šî”ÂãGe”––Œ‚ÌŒ`¬‚Æ”­Œõ“Á«", “c’†ˆêŽ÷C’†‘º–F–¾CŒÜ\ì‰ë”VC‹gìƒCŽðˆä˜N, 2012”Nt‹G@‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, ‘ˆî“c‘åŠw, 2012”N3ŒŽ15-3ŒŽ18“ú.
    • International Silicon-Germanium Technology and Device Meeting (ISTDM)
    1. "Improvement effect of electrical properties in post-annealed wafer-bonded Ge(001)-OI substrates", S. Yamasaka, Y. Nakamura, O. Yoshitake, J. Kikkawa, K. Izunome, A. SakaiC2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012”N6ŒŽ.
    2. "Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers", Y. Moriyama, K. Ikeda, Y. Kamimuta, M. Oda, T. Irisawa, Y. Nakamura, A. Sakai, T. TezukaC2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)C2012”N06ŒŽ.
    • “dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ
    1. "“\‚臂킹’¼ÚÚ‡SrTiO3(001)Šî”‚̒ïRƒXƒCƒbƒ`ƒ“ƒO“Á«•]‰¿", ŸÇ“c—É‘¾CSon PhamCNishad KokateC‹gì@ƒC’|“೑¾˜YC’†‘º–F–¾CŽðˆä@˜N, “dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ, 2012”N6ŒŽ21“ú.
    • H‹G‰ž—p•¨—Šw‰ï
    1. "SiŠî”ÂãƒGƒsƒ^ƒLƒVƒƒƒ‹b-FeSi2ƒiƒmƒhƒbƒg‚ÌÏ‘w‹ZpŠJ”­", ŒÜ\ì‰ë”VC’†‘º–F–¾C‹gì@ƒC’|“೑¾˜YCŽðˆä@˜N, 2012”NH‹G@‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ˆ¤•Q‘åŠwE¼ŽR‘åŠw, 2012”N9ŒŽ11-9ŒŽ14“ú.
    2. "SiŠî”Âã‚̃Gƒsƒ^ƒLƒVƒƒƒ‹SiƒiƒmƒhƒbƒgÏ‘w\‘¢‚ÌŒ`¬‚Æ”M“`“±—¦•]‰¿", ã“c’qLC’†‘º–F–¾CŒÜ\ì‰ë”VC‹gì@ƒCŽðˆä@˜N, 2012”NH‹G@‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ˆ¤•Q‘åŠwE¼ŽR‘åŠw, 2012”N9ŒŽ11-9ŒŽ14“ú.
    3. "”––ŒAl2O3/SiO2 BOX‘w‚ð—L‚·‚é“\‚臂킹GeOIŠî”‚Ìì»", ŽçŽR‰À•FC’r“cŒ\ŽiCã–´“c—YˆêC“ü‘òŽõŽjC¬“c@õC’†‘º–F–¾CŽðˆä@˜NCŽè’Ë@•×, 2012”NH‹G@‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ˆ¤•Q‘åŠwE¼ŽR‘åŠw, 2012”N9ŒŽ11-9ŒŽ14“ú.
    4. "Xüƒ}ƒCƒNƒ‰ñÜ‚É‚æ‚éFACELO¬’·GaN–Œ‚ÌŒ‹»«•]‰¿", ’†‘º–M•FCŒ´“ciŽiCKhan DinhC‹gì@ƒC’|“೑¾˜YC’†‘º–F–¾CŽO‘îGlC•½¼˜a­C¡ˆäN•FC–Ø‘º@Ž Câ“cCgCŽðˆä@˜N, 2012”NH‹G@‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ˆ¤•Q‘åŠwE¼ŽR‘åŠw, 2012”N9ŒŽ11-9ŒŽ14“ú.
    • International Workshop on Nitride Semiconductors
    1. "Local strain distribution in a thick AlN film grown on a trench-patterned AlN/ƒ¿-Al2O3 template measured by X-ray microdiffraction", D. T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. SakaiCInternational Workshop on Nitride Semiconductors 2012C2012”N10ŒŽ.
    • The 2012 Si, SiGe, and Related Compound: Materials, Processing, and Devices Symposium, the PRiME 2012 Joint International 222nd Elecrochemical Society Meeting
    1. "GOI substrates -Fabrication and characterization-", A. Sakai, S. Yamasaka, J. Kikkawa, Y. Nakamura, Y. Moriyama, T. Tezuka, S. Takeuchi, K. IzunomeCThe 2012 Si, SiGe, and Related Compound: Materials, Processing, and Devices Symposium, the PRiME 2012 Joint International 222nd Elecrochemical Society MeetingC2012”N10ŒŽ.
    • The 6th International Symposiiium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium)
    1. "Structural- and electrical characteristics of GeOI/BOX interfaces of bonded GeOI substrates with thin Al2O3/SiO2 hybrid BOX layers", Y. Moriyama, K. Ikeda, Y. Kamimuta, M. Oda, T. Irisawa, S. Takeuchi, Y. Nakamura, A. Sakai, T. TezukaCThe 6th International Symposiiium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium)C2012”N11ŒŽ.
    • NanoMalaysia Summit and Expo
    1. "Investigation of semiconductor nanostructures using focused X-ray beams", A. SakaiCNanoMalaysia Summit and Expo 2012C2012”N11ŒŽ.
    • Materials Research Society Fall Meetings & Exihibits
    1. "Formation technique of stacked epitaxial Si nanodot structures and their thermal conductivity", Y. Nakamura, M. Isogawa, T. Ueda, J. Kikkawa, A. SakaiC2012 Materials Research Society Fall Meetings & ExihibitsC2012”N11ŒŽ.
    • 8th Handai Nanoscience and Nanotechnology International Symposium
    1. "Distribution of Local Strain in Facet Controlled ELO (FACELO) GaN by X-ray Micro Diffraction", K. Nakamura, S. Harada, D. T. Khan, J. Kikkawa, S. Takeuchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, and A. Sakai, 8th Handai Nanoscience and Nanotechnology International SymposiumC2012”N12ŒŽ.
    2. "Cross-sectional X-ray Microdiffraction Study of Residual Strain Distribution in a Thick AlN Film Grown on a Trench-patterned AlN/ƒ¿-Al2O3 Template", D. T. Khan, J. Kikkawa, S. Takeuchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. imai, S. Kimura, O. Sakata, and A. Sakai, 8th Handai Nanoscience and Nanotechnology International SymposiumC2012”N12ŒŽ.
    • ‘æ1‰ñŒ‹»HŠw–¢—ˆmFŒ¤‹†ƒ|ƒXƒ^[”­•\‰ï
    1. "Xüƒ}ƒCƒNƒ‰ñÜ‚É‚æ‚éFACELO¬’·GaN–Œ’†‚Ì‹ÇŠ˜c•ª•z•]‰¿", ’†‘º–M•F, Œ´“ciŽi, Dinh Thanh Khan, ‹gìƒ, ’|“೑¾˜Y, ’†‘º–F–¾, ŽO‘îGl, •½¼˜a­, ¡ˆäN•F, –Ø‘ºŽ , Žðˆä˜N, ‘æ1‰ñŒ‹»HŠw–¢—ˆmFŒ¤‹†ƒ|ƒXƒ^[”­•\‰ï, ŠwK‰@‘åŠw, 2012”N12ŒŽ.
    2011
    • t‹G‰ž—p•¨—Šw‰ï
    1. "“\‚臂킹GOIŠî”‚ɂ¨‚¯‚é“d‹C“Á«‚Ì”Mˆ—•µˆÍ‹CˆË‘¶«", ŽRãŽi—SlC“ì@Œ\—SC’†‘º–F–¾C‹g•@CC‹gì@ƒCòÈGŽ¡CŽðˆä@˜N, 2011”Nt‹G‘æ58‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, _“ÞìH‰È‘åŠw, 2011”N3ŒŽ24-3ŒŽ27“ú.
    2. "ƒtƒH[ƒ~ƒ“ƒO‰ß’ö‚É‹Nˆö‚·‚éSrTiO3ƒoƒCƒNƒŠƒXƒ^ƒ‹Ú‡ŠE–Ê‚ÌEBICƒRƒ“ƒgƒ‰ƒXƒg•Ï‰»", ‰Á“¡“NŽiCThanh Son Pham PhuC’†‘º–F–¾C‹gì@ƒCŽðˆä@˜N, 2011”Nt‹G‘æ58‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, _“ÞìH‰È‘åŠw, 2011”N3ŒŽ24-3ŒŽ27“ú.
    3. "Xüƒ}ƒCƒNƒ‰ñÜ‚ð—p‚¢‚½GaNŽ©—§Šî”‚̊iŽq–ÊŒXŽÎ‚ä‚炬‚̉ðÍ", “nç³ãÄ‘åCŒ´“ciŽiCThanh Khan DinhC‹gì@ƒC’†‘º–F–¾CŽO‘îGlC•½¼˜a­C¡ˆäN•FC–Ø‘º@Ž Câ“cCgCŽðˆä@˜N, 2011”Nt‹G‘æ58‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, _“ÞìH‰È‘åŠw, 2011”N3ŒŽ24-3ŒŽ27“ú.
    • 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
    1. "Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-MOSFET", K. Minami, Y. Nakamura, S. Yamasaka, O. Yoshitake, J. Kikkawa, K. Izunome, and A. Sakai, 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, August 29-September 1, 2011.
    2. "Vertical dislocations in Ge films selectively grown on submicron regions of Si substrates", S. Harada, J. Kikkawa, Y. Nakamura, G. Wang, M. Caymax , and A. Sakai, 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, August 29-September 1, 2011.
    • H‹G‰ž—p•¨—Šw‰ï
    1. "‹É”–SiŽ_‰»–Œ‚ð—p‚¢‚ăiƒmŠE–ʧŒä‚µ‚½SiŠî”Âã’´‚–§“x“SŽ_‰»•¨ƒiƒmƒhƒbƒg‚ÌŒ`¬", •l’†Œ[LC’†‘º–F–¾C™Œ³—º‘¾C‹gìƒCŽðˆä˜N, 2011”NH‹G‘æ72‰ñ‰ž—p•¨—ŠwŠwpu‰‰‰ï, ŽRŒ`‘åŠw, 2011”N8ŒŽ29-9ŒŽ2“ú.
    2. "“\‚臂킹GeOIŠî”‚ɂ¨‚¯‚éŠE–Ê‹ß–TŒ‡Š×–§“x‚Ì”Mˆ—ˆË‘¶«", ŽRãŽi—SlC’†‘º–F–¾C“ìŒ\—SC‹g•CC‹gìƒCòÈGŽ¡CŽðˆä˜N, 2011”NH‹G‘æ72‰ñ‰ž—p•¨—ŠwŠwpu‰‰‰ï, ŽRŒ`‘åŠw, 2011”N8ŒŽ29-9ŒŽ2“ú.
    3. "ƒAƒZƒ`ƒ‹ƒAƒZƒgƒi[ƒgö‘Ì‚ð—p‚¢‚½Ž_‰»ƒoƒiƒWƒEƒ€EƒiƒmƒƒCƒ„‚̬’·", Ε”‹MŽjC‹gìƒC’†‘º–F–¾CŽðˆä˜N, 2011”NH‹G@‘æ72‰ñ‰ž—p•¨—ŠwŠwpu‰‰‰ï, ŽRŒ`‘åŠw, 2011”N8ŒŽ29-9ŒŽ2“ú.
    • 14th International Conference on Defect-Recognition, Imaging and Physics in Semiconductors
    1. "Electron-beam-induced current study of electrocal property change at SrTiO3 bicrystal interface induced by forming process", T. Kato, Y. Nakamura, P. P. T. Son, J. Kikkawa, A. SakaiC14th International Conference on Defect-Recognition, Imaging and Physics in SemiconductorsC2011”N09ŒŽ.
    • 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 11)
    1. "Structural analysis of vicinal Si(110) surfaces with various off-angles", M. Yamashita, Y. Nakamura, A. Yamamoto, J. Kikkawa, K. Izunome, A. SakaiC11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 11), St. Petersburg, Russia, Oct. 2011.
    2. "Formation mechanism of peculiar structures on vicinal Si(110) surfaces", M. Yamashita, Y. Nakamura, R. Sugimoto, J. Kikkawa, K. Izunome, A. SakaiC11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 11), St. Petersburg, Russia, Oct. 2011.
    3. "Formation of iron oxide nanodot structures on Si substrates by controlling nanometer-sized interface using ultrathin SiO2 film technique", Y. Nakamura, H, Hamanaka, K. Tanaka, J. Kikkawa, and A. Sakai, 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructure (ACSIN11), (St Petersburg, Russia, Oct. 2011.
    • 15th International Conference on Thin Films
    1. "X-ray microdiffraction study of three-dimensional distribution of local strain in thick AlN film grown on a trench-patterned AlN/a-Al2O3 template", D. T. Khan, S. Harada, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. SakaiC15th International Conference on Thin FilmsC2011”N11ŒŽ.
    • 7th Handai Nanoscience and Nanotechnology International Symposium
    1. "Formation of ultrahigh density iron oxide nanodots on Si substrates with nanometer-sized interfaces", K. Tanaka, Y. Nakamura, H. Harada, J. Kikkawa, A. SakaiC7th Handai Nanoscience and Nanotechnology International SymposiumC2011”N11ŒŽ.
    2. "Growth of vanadium dioxides nanowires using vanadyl acetylacetonate", T. Ishibe, J. Kikkawa, Y. Nakamura, A. SakaiC7th Handai Nanoscience and Nanotechnology International SymposiumC2011”N11ŒŽ.
    • Materials Research Society Fall Meeting & Exhibit (MRS)
    1. "Growth of Vanadium Oxides Nanowires by using Vanadyl Acetylacetonates", T. Ishibe, J. Kikkawa, Y. Nakamura, and A. Sakai, Materials Research Society Fall Meeting & Exhibit (MRS), Boston, USA, November 28-December 2, 2011.
    2010
    • ‰ÈŠwŒ¤‹†”ï•â•‹à “Á’è—̈挤‹† ‘æ4‰ñ ¬‰Ê•ñ‰ï
    1. g“\‚臂¹GOIŠî”‚ɂ¨‚¯‚éGe/SiO2ŠE–Ê\‘¢‚Ì”Mˆ—‰·“xˆË‘¶«h, ‹g•C,‹gìƒ, ’†‘º–F–¾, Žðˆä˜N, –L“c‰p“ñ, ˆéŠLG“¹, òÈGŽ¡, ‰ÈŠwŒ¤‹†”ï•â•‹à “Á’è—̈挤‹† ‘æ4‰ñ ¬‰Ê•ñ‰ï, H—tŒ´, 2010”N1ŒŽ19“ú-1ŒŽ20“ú.
    • 5th International WorkShop on New Group IV Semiconductor Nanoelectronics
    1. Invited: gPotential of Ge1-xSnx alloys as high mobility channel materials and stressorsh, S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 67-68, Sendai, Japan, Jan. 29-30, 2010.
    2. gMicroscopic characterization of Si(011)/Si(001) direct silicon bonding substratesh, T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 37-38, Sendai, Japan, Jan. 29-30, 2010.
    3. gStrain Relaxation Behavior of Ge1-xSnx Buffer Layers on Si and Virtual Ge Substratesh, Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 43-44, Sendai, Japan, Jan. 29-30, 2010.
    • t‹G‰ž—p•¨—Šw‰ï
    1. gSi(110)•\–Ê\‘¢‚̃IƒtŠpˆË‘¶«h, ŽR‰º@’ÁCŽR–{@¹C’†‘º–F–¾C‹gì@ƒCŽðˆä@˜NC–L“c‰p“ñC²“¡Œ³Ž÷CˆéŠLG“¹CòÈGŽ¡, 2010”Nt‹G‘æ57‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, “ŒŠC‘åŠw, 2010”N3ŒŽ17“ú-3ŒŽ20“ú.
    2. gSiŠî”Âã‚É‘I‘ðƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·‚µ‚½Ge×ü‚̘cŠÉ˜a‰ß’öh, ŠC˜VŒ´^•½CŒ´“ciŽiC‹gì@ƒC’†‘º–F–¾CŽðˆä@˜NCGang WangCMatty CaymaxC¡ˆäN•FC–Ø‘º@Ž Câ“cCg, 2010”Nt‹G‘æ57‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, “ŒŠC‘åŠw, 2010”N3ŒŽ17“ú-3ŒŽ20“ú.
    3. g“\‚臂¹GOIŠî”‚ɂ¨‚¯‚éGe/SiO2ŠE–Ê\‘¢‚Ì”Mˆ—‰·“xˆË‘¶«h, ‹g•C,‹gìƒ, ’†‘º–F–¾, Žðˆä˜N, –L“c‰p“ñ, ˆéŠLG“¹, òÈGŽ¡, 2010”Nt‹G‘æ57‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï, “ŒŠC‘åŠw, 2010”N3ŒŽ17“ú-3ŒŽ20“ú.
    • 5th International conference on SiGe Technology and Device Meeting (ISTDM)
    1. "X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates", K. Ebihara, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata, 5th International conference on SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May 24-26, 2010.
    • International Conference on Core Research and Engineering Science of Advanced Materials (Global COE Program)
    1. "Annealing Effects on Ge/SiO2 Interfaces in Wafer-Bonded GOI Substrates", O. Yoshitake, J. Kikkawa, Y. Nakamura, A. Sakai, E. Toyoda, H. Isogai and K. Izunome, International Conference on Core Research and Engineering Science of Advanced Materials (Global COE Program), Osaka, May 30- June 5, 2010.
    • Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010)
    1. "Formation of ultrahigh density iron-based nanodots on Si (111) substrates using ultrathin SiO2 films", H. Hamanaka, Y. Nakamura, K. Tanaka, J. Kikkawa, and A. Sakai, Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010), Tsukuba, July 24-26, 2010.
    • H‹G‰ž—p•¨—Šw‰ï
    1. g‹É”–SiŽ_‰»–Œ‚ð—p‚¢‚½Si(111)Šî”Âã’´‚–§“x“SŒnƒiƒmƒhƒbƒg‚ÌŒ`¬h, •l’†Œ[LC’†‘º–F–¾C“c’†ˆêŽ÷C‹gì@ƒCŽðˆä@˜N, 2010”NH‹G‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ’·è‘åŠw, 2010”N9ŒŽ14“ú-9ŒŽ17“ú.
    2. gƒXƒsƒ“MOSFET—pFe3Si/SOI(111)‚•iŽ¿Ú‡‚Ìì»h, ”nê—YŽOC‘ºã’B•FC‹´–{’¼Ž÷CˆÀ“¡—Tˆê˜YC•l‰®G•½C‹gì@ƒC’†‘º–F–¾C–L“c‰p“ñCòÈGŽ¡CŽðˆä@˜NC‹{”ö³M, 2010”NH‹G‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ’·è‘åŠw, 2010”N9ŒŽ14“ú-9ŒŽ17“ú.
    3. gŽl’TjŒ^Pseudo-MOS ƒgƒ‰ƒ“ƒWƒXƒ^–@‚ð—p‚¢‚½“\‚臂¹Germanium(111)-on-Insulator Šî”‚̓d‹C“Á«•]‰¿h, “ì@Œ\—SC’†‘º–F–¾C‹gì@ƒC–L“c‰p“ñCòÈGŽ¡C•l‰®G•½C‹{”ö³MCŽðˆä@˜N, 2010”NH‹G‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ’·è‘åŠw, 2010”N9ŒŽ14“ú-9ŒŽ17“ú.
    4. gSiŠî”ÂãƒTƒuƒ~ƒNƒƒ“—̈æ‚ɃGƒsƒ^ƒLƒVƒƒƒ‹¬’·‚µ‚½Ge”––Œ‚Ì“]ˆÊ\‘¢h, Œ´“ciŽiCŠC˜VŒ´^•½C‹gì@ƒC’†‘º–F–¾CŽðˆä@˜NCWang GangCCaymax Matty, 2010”NH‹G‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, ’·è‘åŠw, 2010”N9ŒŽ14“ú-9ŒŽ17“ú.
    • International Conference on Solid State Devices and Materials (SSDM)
    1. "Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET", Y. Iwasaki, Y. Nakamura, J. Kikkawa, A. Sakai, M. Sato, E. Toyoda, H. Isogai, and K. Izunome, 2010 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Sep. 22-24, 2010.
    2. "Annealing Effects on Ge/SiO2 interface Structure in wafer-bonded germanium-on-insulator substrates", O. Yoshitake, J. Kikkawa, Y. Nakamura, A. Sakai, E. Toyoda, H. Isogai and K. Izunome, 2010 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Sep. 22-24, 2010.
    • 218th ECS meeting
    1. "X-ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates", K. Ebihara, S. Harada, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata, 218th ECS meeting, LasVegas, Oct. 10-15, 2010.
    • Material Research Society Fall Meeting
    1. "Two-dimensional nanoarray of SiGe epitaxial nanodots self-organized by selective etching of edge dislocation network", Y. Nakamura, M. Takahashi, J. Kikkawa, O. Nakatsuka, S. Zaima, and A. Sakai, 2010 Material Research Society Fall Meeting, Boston, Nov. 29-Dec. 3, 2010.
    • 18th International Colloquium on Scanning Probe Microscopy (ICSPM18)
    1. "Structural Analysis of Si-based Nanodot Arrays Self-organized by Selective Etching of SiGe/Si Films", M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima and A. Sakai, 18th International Colloquium on Scanning Probe Microscopy (ICSPM18), Izuatagawa, Dec. 9-11, 2010.
    2009
    1. Invited: gFormation and characterization of tensile-strained Ge layers on Ge1-xSnx buffer layersh, S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, and A. Sakai, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
    2. gLow Temperature Growth of Ge1-xSnx Buffer Layers for Tensile-strained Ge Layersh, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
    3. gAnalysis of Local Strain in Ge1-xSnx /Ge/Si(001) Heterostructures by X-ray Microdiffractionh, O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai, Y. Imai, H. Tajiri, O. Sakata, S. Kimura, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
    4. gStructural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealingh, T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
    5. g“\‚臂킹GOIŠî”‚ÌGe/SiO2Ú‡ŠE–Ê‚Ì\‘¢•]‰¿h, ‹g•C1,‹gìƒ1, ’†‘º–F–¾1, Žðˆä˜N1, –L“c‰p“ñ2, ˆéŠLG“¹2, òÈGŽ¡2, 1ã‘å‰@Šî‘bH, 2ƒRƒoƒŒƒ“ƒgƒ}ƒeƒŠƒAƒ‹(Š”), ‘æ70‰ñH‹G‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï, 10a-P6-14, •xŽR‘åŠw, 09. 8-11, 2009
    6. gMobility Behavior in Ge1-xSnx Layers Grown on SOI Substratesh, N. Tsutsui, Y. Shimura, O. Nakatsuka, A. Sakai, and S. Zaima, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009.

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